Highly Reliable and High-Yield 1.2V HfZrOx FRAM and its Physical Origin via Micrometer-Scale Nanocrystalline Domain Analysis
- Yu De Lin*
- , Chen Yi Cho
- , Jian Wei Su
- , Yi Hui Wei
- , Li Ying Hung
- , Po Han Chang
- , Ching Chih Hsu
- , Po Chun Yeh
- , Min Hung Lee
- , Tuo Hung Hou
- , Shyh Shyuan Sheu
- , Wei Chung Lo
- , Shih Chieh Chang
*Corresponding author for this work
Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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