@inproceedings{f0bc81c57c6442ee936c65a8b90cf9d0,
title = "Highly Reliable and High-Yield 1.2V HfZrOx FRAM and its Physical Origin via Micrometer-Scale Nanocrystalline Domain Analysis",
abstract = "A highly reliable HfZrOx FRAM technology has been achieved with the endurance of up to 1012 cycles at 85°C with ±1.2V. 256 kb 1T1C FRAM chips with 8nm and 6nm HfZrOx exhibit a 100\% 8kb-yield without wake-up (84\% of chips) and with a 400 μs wake-up pulse at room temperature, respectively. An operation speed of 20ns at ±1.2V is demonstrated in the Shmoo plot. The robust high-temperature reliability and high-yield arrays are achieved through a solid understanding of over-optimistic 2Pr and transmission Kikuchi diffraction (TKD) for micrometer-scale nanocrystalline crystal domain inspection. This work suggests a viable scaling path and improves the performance of HfZrOx FRAM technology.",
author = "Lin, \{Yu De\} and Cho, \{Chen Yi\} and Su, \{Jian Wei\} and Wei, \{Yi Hui\} and Hung, \{Li Ying\} and Chang, \{Po Han\} and Hsu, \{Ching Chih\} and Yeh, \{Po Chun\} and Lee, \{Min Hung\} and Hou, \{Tuo Hung\} and Sheu, \{Shyh Shyuan\} and Lo, \{Wei Chung\} and Chang, \{Shih Chieh\}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE International Electron Devices Meeting, IEDM 2024 ; Conference date: 07-12-2024 Through 11-12-2024",
year = "2024",
doi = "10.1109/IEDM50854.2024.10873386",
language = "English",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE International Electron Devices Meeting, IEDM 2024",
}