Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

C. H. Cheng; H. H. Hsu; P. C. Chen; B. H. Liou; Albert Chin; F. S. Yeh

doi:10.1016/j.sse.2010.01.024

Higher-κ titanium dioxide incorporating LaAlO₃ as dielectrics for MIM capacitors

C. H. Cheng^*
, H. H. Hsu
, P. C. Chen
, B. H. Liou
, Albert Chin
, F. S. Yeh

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this work, we studied a TiO₂ mixed LaAlO₃ dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm² and a low leakage current of 7.5 × 10^-7 A/cm² at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al₂O₃ doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO₂-based dielectrics with the introduction of Al₂O₃ might be favorable for the improved engineering of MIM capacitors.

Original language	English
Pages (from-to)	646-649
Number of pages	4
Journal	Solid-State Electronics
Volume	54
Issue number	6
DOIs	https://doi.org/10.1016/j.sse.2010.01.024
Publication status	Published - 2010 Jun
Externally published	Yes

Keywords

AlO
LaAlO
Metal-insulator-metal capacitor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2010.01.024

Cite this

@article{cc81f79889a347b09b06500ce90a189b,

title = "Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors",

abstract = "In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.",

keywords = "AlO, LaAlO, Metal-insulator-metal capacitor",

author = "Cheng, \{C. H.\} and Hsu, \{H. H.\} and Chen, \{P. C.\} and Liou, \{B. H.\} and Albert Chin and Yeh, \{F. S.\}",

year = "2010",

month = jun,

doi = "10.1016/j.sse.2010.01.024",

language = "English",

volume = "54",

pages = "646--649",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "6",

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TY - JOUR

T1 - Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

AU - Cheng, C. H.

AU - Hsu, H. H.

AU - Chen, P. C.

AU - Liou, B. H.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2010/6

Y1 - 2010/6

N2 - In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.

AB - In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.

KW - AlO

KW - LaAlO

KW - Metal-insulator-metal capacitor

UR - https://www.scopus.com/pages/publications/77950296696

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U2 - 10.1016/j.sse.2010.01.024

DO - 10.1016/j.sse.2010.01.024

M3 - Article

AN - SCOPUS:77950296696

SN - 0038-1101

VL - 54

SP - 646

EP - 649

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 6

ER -