Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

C. H. Cheng, H. H. Hsu, P. C. Chen, B. H. Liou, Albert Chin, F. S. Yeh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.

Original languageEnglish
Pages (from-to)646-649
Number of pages4
JournalSolid-State Electronics
Volume54
Issue number6
DOIs
Publication statusPublished - 2010 Jun 1

Fingerprint

titanium oxides
Titanium dioxide
capacitors
Capacitors
Metals
insulators
Leakage currents
metals
leakage
Electric breakdown
Capacitance
Doping (additives)
breakdown
capacitance
nonlinearity
titanium dioxide
engineering
Electric potential
electric potential

Keywords

  • AlO
  • LaAlO
  • Metal-insulator-metal capacitor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors. / Cheng, C. H.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.

In: Solid-State Electronics, Vol. 54, No. 6, 01.06.2010, p. 646-649.

Research output: Contribution to journalArticle

Cheng, C. H. ; Hsu, H. H. ; Chen, P. C. ; Liou, B. H. ; Chin, Albert ; Yeh, F. S. / Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors. In: Solid-State Electronics. 2010 ; Vol. 54, No. 6. pp. 646-649.
@article{d2ec9109c6f544449d2ff19bdcc62d96,
title = "Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors",
abstract = "In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.",
keywords = "AlO, LaAlO, Metal-insulator-metal capacitor",
author = "Cheng, {C. H.} and Hsu, {H. H.} and Chen, {P. C.} and Liou, {B. H.} and Albert Chin and Yeh, {F. S.}",
year = "2010",
month = "6",
day = "1",
doi = "10.1016/j.sse.2010.01.024",
language = "English",
volume = "54",
pages = "646--649",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "6",

}

TY - JOUR

T1 - Higher-κ titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitors

AU - Cheng, C. H.

AU - Hsu, H. H.

AU - Chen, P. C.

AU - Liou, B. H.

AU - Chin, Albert

AU - Yeh, F. S.

PY - 2010/6/1

Y1 - 2010/6/1

N2 - In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.

AB - In this work, we studied a TiO2 mixed LaAlO3 dielectric (TLAO) for metal-insulator-metal (MIM) capacitors. The resulting capacitor characteristics showed a high capacitance density of 23.2 fF/μm2 and a low leakage current of 7.5 × 10-7 A/cm2 at -1 V. Comparing to the control samples of TiLaO (TLO), TLAO dielectrics with Al2O3 doping showed lower leakage current, smaller voltage nonlinearity and better time-dependent dielectric breakdown (TDDB) performance. Therefore, the TiO2-based dielectrics with the introduction of Al2O3 might be favorable for the improved engineering of MIM capacitors.

KW - AlO

KW - LaAlO

KW - Metal-insulator-metal capacitor

UR - http://www.scopus.com/inward/record.url?scp=77950296696&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77950296696&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2010.01.024

DO - 10.1016/j.sse.2010.01.024

M3 - Article

AN - SCOPUS:77950296696

VL - 54

SP - 646

EP - 649

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 6

ER -