High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process

Chun Yu Lin; Yi Ju Li; Ming Dou Ker

doi:10.1109/NEWCAS.2012.6328972

High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process

Chun Yu Lin^*, Yi Ju Li, Ming Dou Ker

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

A novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-μm CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-μm low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications.

Original language	English
Title of host publication	2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012
Pages	125-128
Number of pages	4
DOIs	https://doi.org/10.1109/NEWCAS.2012.6328972
Publication status	Published - 2012
Externally published	Yes
Event	2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012 - Montreal, QC, Canada Duration: 2012 Jun 17 → 2012 Jun 20

Publication series

Name	2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012

Other

Other	2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012
Country/Territory	Canada
City	Montreal, QC
Period	2012/06/17 → 2012/06/20

ASJC Scopus subject areas

Computer Networks and Communications
Control and Systems Engineering

Access to Document

10.1109/NEWCAS.2012.6328972

Cite this

Lin, C. Y., Li, Y. J., & Ker, M. D. (2012). High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process. In 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012 (pp. 125-128). Article 6328972 (2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012). https://doi.org/10.1109/NEWCAS.2012.6328972

High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process. / Lin, Chun Yu; Li, Yi Ju; Ker, Ming Dou.
2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012. 2012. p. 125-128 6328972 (2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lin, CY, Li, YJ & Ker, MD 2012, High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process. in 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012., 6328972, 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012, pp. 125-128, 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012, Montreal, QC, Canada, 2012/06/17. https://doi.org/10.1109/NEWCAS.2012.6328972

Lin CY, Li YJ, Ker MD. High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process. In 2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012. 2012. p. 125-128. 6328972. (2012 IEEE 10th International New Circuits and Systems Conference, NEWCAS 2012). doi: 10.1109/NEWCAS.2012.6328972

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abstract = "A novel design of high-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic system-on-chip (SoC) in a 0.18-μm CMOS process was proposed. This design can deliver the required stimulus current within a specific range of loading impedance. Besides, this design in 0.18-μm low-voltage CMOS process can be operated at high voltage by using only low-voltage transistors. Without using high-voltage transistors, the process step can be reduced and the fabrication yield can be improved. The proposed design can be further integrated for the electronic epilepsy prosthetic SoC applications.",

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High-voltage-tolerant stimulator with adaptive loading consideration for electronic epilepsy prosthetic SoC in a 0.18-μm CMOS process

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