High-Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning

K. C. Chiang; Albert Chin; C. H. Cheng; C. P. Chou; H. C. Pan; C. N. Hsiao; H. L. Hwang

doi:10.1109/LED.2007.891265

High-Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning

K. C. Chiang
, Albert Chin
, C. H. Cheng
, C. P. Chou
, H. C. Pan
, C. N. Hsiao
, H. L. Hwang

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

Using low-cost and high work-function Ni, a low leakage current of 5 x 10^–6 A/cm² at 125 °C is obtained in a high 25-fF/μm² -density SrTiO₃ metal-insulator-metal (MIM) capacitor processed at 400 °C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall κ value beyond previous laminate structure.

Original language	English
Pages (from-to)	235-237
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	3
DOIs	https://doi.org/10.1109/LED.2007.891265
Publication status	Published - 2007 Mar 7
Externally published	Yes

Keywords

Capacitor
Ni
high temperature
metal-insulator-metal (MIM)
thermal leakage

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.891265

Cite this

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abstract = "Using low-cost and high work-function Ni, a low leakage current of 5 x 10–6 A/cm2 at 125 °C is obtained in a high 25-fF/μm2 -density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 °C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall κ value beyond previous laminate structure.",

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doi = "10.1109/LED.2007.891265",

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AU - Chiang, K. C.

AU - Chin, Albert

AU - Cheng, C. H.

AU - Chou, C. P.

AU - Pan, H. C.

AU - Hsiao, C. N.

AU - Hwang, H. L.

PY - 2007/3/7

Y1 - 2007/3/7

N2 - Using low-cost and high work-function Ni, a low leakage current of 5 x 10–6 A/cm2 at 125 °C is obtained in a high 25-fF/μm2 -density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 °C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall κ value beyond previous laminate structure.

AB - Using low-cost and high work-function Ni, a low leakage current of 5 x 10–6 A/cm2 at 125 °C is obtained in a high 25-fF/μm2 -density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 °C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall κ value beyond previous laminate structure.

KW - Capacitor

KW - Ni

KW - high temperature

KW - metal-insulator-metal (MIM)

KW - thermal leakage

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DO - 10.1109/LED.2007.891265

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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High-Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning

Abstract

Keywords

ASJC Scopus subject areas

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