High-Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning

K. C. Chiang, Albert Chin, C. H. Cheng, C. P. Chou, H. C. Pan, C. N. Hsiao, H. L. Hwang

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

Using low-cost and high work-function Ni, a low leakage current of 5 x 10–6 A/cm2 at 125 °C is obtained in a high 25-fF/μm2 -density SrTiO3 metal-insulator-metal (MIM) capacitor processed at 400 °C. This is approximately two orders of magnitude better than the same device using a TaN electrode, with added advantages of improved voltage and temperature coefficients of capacitance. This work-function tuning method also has merit for achieving both low thermal leakage and high overall κ value beyond previous laminate structure.

Original languageEnglish
Pages (from-to)235-237
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number3
DOIs
Publication statusPublished - 2007 Mar 7

Fingerprint

Capacitors
Tuning
Metals
Leakage currents
Laminates
Capacitance
Temperature
Electrodes
Electric potential
Costs
Hot Temperature
strontium titanium oxide

Keywords

  • Capacitor
  • Ni
  • high temperature
  • metal-insulator-metal (MIM)
  • thermal leakage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

High-Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning. / Chiang, K. C.; Chin, Albert; Cheng, C. H.; Chou, C. P.; Pan, H. C.; Hsiao, C. N.; Hwang, H. L.

In: IEEE Electron Device Letters, Vol. 28, No. 3, 07.03.2007, p. 235-237.

Research output: Contribution to journalArticle

Chiang, K. C. ; Chin, Albert ; Cheng, C. H. ; Chou, C. P. ; Pan, H. C. ; Hsiao, C. N. ; Hwang, H. L. / High-Temperature Leakage Improvement in Metal-Insulator-Metal Capacitors by Work-Function Tuning. In: IEEE Electron Device Letters. 2007 ; Vol. 28, No. 3. pp. 235-237.
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