High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment

Ching Lien Hsiao, Ting Wei Liu, Chien Ting Wu, Hsu Cheng Hsu, Geng Ming Hsu, Li Chyong Chen, Wen Yu Shiao, C. C. Yang, Andreas Gällström, Per Olof Holtz, Chia Chun Chen, Kuei Hsien Chen

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Abstract

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r -plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors.

Original languageEnglish
Article number111914
JournalApplied Physics Letters
Volume92
Issue number11
DOIs
Publication statusPublished - 2008 Mar 28

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hsiao, C. L., Liu, T. W., Wu, C. T., Hsu, H. C., Hsu, G. M., Chen, L. C., Shiao, W. Y., Yang, C. C., Gällström, A., Holtz, P. O., Chen, C. C., & Chen, K. H. (2008). High-phase-purity zinc-blende InN on r -plane sapphire substrate with controlled nitridation pretreatment. Applied Physics Letters, 92(11), [111914]. https://doi.org/10.1063/1.2898214