High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

Yu Chiang Chao; Chin Ho Chung; Hsiao Wen Zan; Hsin Fei Meng; Ming Che Ku

doi:10.1063/1.3668086

High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

Yu Chiang Chao, Chin Ho Chung, Hsiao Wen Zan^*, Hsin Fei Meng, Ming Che Ku

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO ₃/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 ⁴, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

Original language	English
Article number	233308
Journal	Applied Physics Letters
Volume	99
Issue number	23
DOIs	https://doi.org/10.1063/1.3668086
Publication status	Published - 2011 Dec 5
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3668086

Cite this

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title = "High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer",

abstract = "A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.",

author = "Chao, {Yu Chiang} and Chung, {Chin Ho} and Zan, {Hsiao Wen} and Meng, {Hsin Fei} and Ku, {Ming Che}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC100-2628-M-009-002-.",

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AU - Chao, Yu Chiang

AU - Chung, Chin Ho

AU - Zan, Hsiao Wen

AU - Meng, Hsin Fei

AU - Ku, Ming Che

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC100-2628-M-009-002-.

PY - 2011/12/5

Y1 - 2011/12/5

N2 - A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

AB - A vertical polymer nanorod transistor was realized based on an air-stable poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′-bithiophene] with a high highest occupied molecular orbital energy level. The influence of the work function of the emitter on the performances of the space-charge-limited transistor was investigated. When MoO 3/Al was used as the top emitter and indium tin oxide was used as the bottom collector, the operating voltage of 0.6 V, the on/off current ratio of 4 × 10 4, and the switching swing of 105 mV/decade were achieved. A low-power-consumption inverter was also demonstrated.

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High-performance vertical polymer nanorod transistors based on air-stable conjugated polymer

Abstract

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