High performance ultra-low energy RRAM with good retention and endurance

C. H. Cheng; C. Y. Tsai; Albert Chin; F. S. Yeh

doi:10.1109/IEDM.2010.5703392

High performance ultra-low energy RRAM with good retention and endurance

C. H. Cheng, C. Y. Tsai, Albert Chin, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

46 Citations (Scopus)

Abstract

High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×10² resistance window for 10 ⁴ sec retention at 125°C, and 10⁶ cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.

Original language	English
Title of host publication	2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages	19.4.1-19.4.4
DOIs	https://doi.org/10.1109/IEDM.2010.5703392
Publication status	Published - 2010
Externally published	Yes
Event	2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States Duration: 2010 Dec 6 → 2010 Dec 8

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2010 IEEE International Electron Devices Meeting, IEDM 2010
Country/Territory	United States
City	San Francisco, CA
Period	2010/12/06 → 2010/12/08

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2010.5703392

Cite this

High performance ultra-low energy RRAM with good retention and endurance. / Cheng, C. H.; Tsai, C. Y.; Chin, Albert et al.
2010 IEEE International Electron Devices Meeting, IEDM 2010. 2010. p. 19.4.1-19.4.4 5703392 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cheng, CH, Tsai, CY, Chin, A & Yeh, FS 2010, High performance ultra-low energy RRAM with good retention and endurance. in 2010 IEEE International Electron Devices Meeting, IEDM 2010., 5703392, Technical Digest - International Electron Devices Meeting, IEDM, pp. 19.4.1-19.4.4, 2010 IEEE International Electron Devices Meeting, IEDM 2010, San Francisco, CA, United States, 2010/12/06. https://doi.org/10.1109/IEDM.2010.5703392

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High performance ultra-low energy RRAM with good retention and endurance

Abstract

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ASJC Scopus subject areas

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