High performance ultra-low energy RRAM with good retention and endurance

C. H. Cheng, C. Y. Tsai, Albert Chin, F. S. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Citations (Scopus)

Abstract

High performance novel RRAM of 0.3 μW set power (0.1 μA at 3 V), 0.6 nW reset power (-0.3 nA at -1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 10 4 sec retention at 125°C, and 106 cycling endurance were measured simultaneously. This is the first time that the switching energy of new non-volatile memory is close to existing Flash Memory.

Original languageEnglish
Title of host publication2010 IEEE International Electron Devices Meeting, IEDM 2010
Pages19.4.1-19.4.4
DOIs
Publication statusPublished - 2010 Dec 1
Event2010 IEEE International Electron Devices Meeting, IEDM 2010 - San Francisco, CA, United States
Duration: 2010 Dec 62010 Dec 8

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2010 IEEE International Electron Devices Meeting, IEDM 2010
CountryUnited States
CitySan Francisco, CA
Period10/12/610/12/8

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Cheng, C. H., Tsai, C. Y., Chin, A., & Yeh, F. S. (2010). High performance ultra-low energy RRAM with good retention and endurance. In 2010 IEEE International Electron Devices Meeting, IEDM 2010 (pp. 19.4.1-19.4.4). [5703392] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2010.5703392