High-performance solution-processed polymer space-charge-limited transistor

Yu Chiang Chao; Hsin Fei Meng; Sheng Fu Horng; Chain Shu Hsu

doi:10.1016/j.orgel.2007.11.012

High-performance solution-processed polymer space-charge-limited transistor

Yu Chiang Chao, Hsin Fei Meng^*, Sheng Fu Horng, Chain Shu Hsu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 10⁴. The current density is higher than 1 mA/cm².

Original language	English
Pages (from-to)	310-316
Number of pages	7
Journal	Organic Electronics
Volume	9
Issue number	3
DOIs	https://doi.org/10.1016/j.orgel.2007.11.012
Publication status	Published - 2008 Jun
Externally published	Yes

Keywords

Space-charge-limited current
Vertical transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.orgel.2007.11.012

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@article{85e9912ea5b04eb7a1f331413978d8cb,

title = "High-performance solution-processed polymer space-charge-limited transistor",

abstract = "We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.",

keywords = "Space-charge-limited current, Vertical transistor",

author = "Chao, {Yu Chiang} and Meng, {Hsin Fei} and Horng, {Sheng Fu} and Hsu, {Chain Shu}",

note = "Funding Information: This work is supported by the National Science Council of the Republic of China under Contract No. NSC96-2112-M-009-036.",

year = "2008",

month = jun,

doi = "10.1016/j.orgel.2007.11.012",

language = "English",

volume = "9",

pages = "310--316",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - High-performance solution-processed polymer space-charge-limited transistor

AU - Chao, Yu Chiang

AU - Meng, Hsin Fei

AU - Horng, Sheng Fu

AU - Hsu, Chain Shu

N1 - Funding Information: This work is supported by the National Science Council of the Republic of China under Contract No. NSC96-2112-M-009-036.

PY - 2008/6

Y1 - 2008/6

N2 - We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.

AB - We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.

KW - Space-charge-limited current

KW - Vertical transistor

UR - http://www.scopus.com/inward/record.url?scp=41549096466&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=41549096466&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2007.11.012

DO - 10.1016/j.orgel.2007.11.012

M3 - Article

AN - SCOPUS:41549096466

SN - 1566-1199

VL - 9

SP - 310

EP - 316

JO - Organic Electronics

JF - Organic Electronics

IS - 3

ER -

High-performance solution-processed polymer space-charge-limited transistor

Abstract

Keywords

ASJC Scopus subject areas

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