High-performance solution-processed polymer space-charge-limited transistor

Yu Chiang Chao, Hsin Fei Meng*, Sheng Fu Horng, Chain Shu Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.

Original languageEnglish
Pages (from-to)310-316
Number of pages7
JournalOrganic Electronics
Issue number3
Publication statusPublished - 2008 Jun
Externally publishedYes


  • Space-charge-limited current
  • Vertical transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


Dive into the research topics of 'High-performance solution-processed polymer space-charge-limited transistor'. Together they form a unique fingerprint.

Cite this