High-performance solution-processed polymer space-charge-limited transistor

Yu Chiang Chao, Hsin Fei Meng, Sheng Fu Horng, Chain Shu Hsu

    Research output: Contribution to journalArticlepeer-review

    27 Citations (Scopus)


    We demonstrate a polymer non-field-effect transistor in a vertical architecture with an Al grid embedded in a polymer sandwiched between another two electrodes. The Al grid containing high density of self-assembled submicron openings is fabricated by a non-lithography method. This device modulates the space-charge-limited current of a unipolar polymer diode with the Al grid. The operating voltage of the device is as low as 4 V, the on/off ratio is higher than one hundred, and the current gain is 104. The current density is higher than 1 mA/cm2.

    Original languageEnglish
    Pages (from-to)310-316
    Number of pages7
    JournalOrganic Electronics
    Issue number3
    Publication statusPublished - 2008 Jun


    • Space-charge-limited current
    • Vertical transistor

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Biomaterials
    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry
    • Electrical and Electronic Engineering


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