High-performance poly-Si TFTs using ultrathin HfSiO_x gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications

Engineering & Materials Science

• Monolithic integrated circuits 100%
• Gate dielectrics 93%
• Three dimensional integrated circuits 91%
• Thin film transistors 83%
• Polysilicon 75%
• Integrated circuits 60%
• Glass 52%
• Silicon 51%
• Carrier transport 50%
• Spectral density 44%
• Drain current 41%
• Leakage currents 35%
• Grain boundaries 33%
• Light emitting diodes 32%
• Electric power utilization 24%
• Metals 20%
• Networks (circuits) 18%
• Hot Temperature 15%
• Temperature 13%

Chemical Compounds

• Dielectric Material 57%
• Drain Current 50%
• Glass 45%
• Leakage Current 43%
• Grain Boundary 33%
• Application 20%
• Ambient Reaction Temperature 18%
• Reduction 14%
• Metal 14%