TY - JOUR
T1 - High-performance poly-Si TFTs using ultrathin HfSiOx gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications
AU - Lee, M. H.
AU - Wu, S. L.
AU - Yang, M. J.
AU - Chen, K. J.
AU - Luo, G. L.
AU - Lee, L. S.
AU - Kao, M. J.
N1 - Funding Information:
Manuscript received March 30, 2010; revised May 3, 2010; accepted May 9, 2010. Date of publication June 28, 2010; date of current version July 23, 2010. This work was supported in part by the National Science Council under Grant NSC 98-2221-E-003-020-MY3 and in part by the Nano Facility Center, Taiwan. The review of this letter was arranged by Editor A. Nathan. M. H. Lee and K.-J. Chen are with the Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 116, Taiwan (e-mail: [email protected]). S. L. Wu is with the Department of Electronic Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan. M.-J. Yang is with Sunrise Global Solar Energy, Yilan 268, Taiwan. G.-L. Luo is with the National Nano Device Laboratories, Hsinchu 30078, Taiwan. L.-S. Lee and M.-J. Kao are with the Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2010.2050573
PY - 2010/8
Y1 - 2010/8
N2 - High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-κ metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 °C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 108 at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S ID and a smaller exponential frequency factor (γ) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.
AB - High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-κ metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 °C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 108 at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S ID and a smaller exponential frequency factor (γ) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.
KW - erms-HfSiO
KW - high-κ
KW - poly-Si
KW - subthreshold swing (SS)
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U2 - 10.1109/LED.2010.2050573
DO - 10.1109/LED.2010.2050573
M3 - Article
AN - SCOPUS:77955173010
SN - 0741-3106
VL - 31
SP - 824
EP - 826
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 8
M1 - 5497075
ER -