High-performance poly-Si TFTs using ultrathin HfSiO x gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications

Min-Hung Lee, S. L. Wu, M. J. Yang, K. J. Chen, G. L. Luo, L. S. Lee, M. J. Kao

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-κ metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 °C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 10 8 at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S ID and a smaller exponential frequency factor (γ) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.

Original languageEnglish
Article number5497075
Pages (from-to)824-826
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number8
DOIs
Publication statusPublished - 2010 Aug 1

Fingerprint

Monolithic integrated circuits
Gate dielectrics
Silicon
Thin film transistors
Polysilicon
Integrated circuits
Glass
Carrier transport
Spectral density
Drain current
Leakage currents
Light emitting diodes
Grain boundaries
Electric power utilization
Metals
Networks (circuits)
Temperature
Three dimensional integrated circuits
Hot Temperature

Keywords

  • erms-HfSiO
  • high-κ
  • poly-Si
  • subthreshold swing (SS)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

High-performance poly-Si TFTs using ultrathin HfSiO x gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications . / Lee, Min-Hung; Wu, S. L.; Yang, M. J.; Chen, K. J.; Luo, G. L.; Lee, L. S.; Kao, M. J.

In: IEEE Electron Device Letters, Vol. 31, No. 8, 5497075, 01.08.2010, p. 824-826.

Research output: Contribution to journalArticle

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