Abstract
High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-κ metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 °C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 10 8 at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S ID and a smaller exponential frequency factor (γ) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.
| Original language | English |
|---|---|
| Article number | 5497075 |
| Pages (from-to) | 824-826 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 31 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2010 Aug 1 |
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Keywords
- erms-HfSiO
- high-κ
- poly-Si
- subthreshold swing (SS)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
High-performance poly-Si TFTs using ultrathin HfSiO x gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications . / Lee, Min-Hung; Wu, S. L.; Yang, M. J.; Chen, K. J.; Luo, G. L.; Lee, L. S.; Kao, M. J.
In: IEEE Electron Device Letters, Vol. 31, No. 8, 5497075, 01.08.2010, p. 824-826.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-performance poly-Si TFTs using ultrathin HfSiO x gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications
AU - Lee, Min-Hung
AU - Wu, S. L.
AU - Yang, M. J.
AU - Chen, K. J.
AU - Luo, G. L.
AU - Lee, L. S.
AU - Kao, M. J.
PY - 2010/8/1
Y1 - 2010/8/1
N2 - High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-κ metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 °C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 10 8 at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S ID and a smaller exponential frequency factor (γ) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.
AB - High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-κ metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 °C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 10 8 at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S ID and a smaller exponential frequency factor (γ) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.
KW - erms-HfSiO
KW - high-κ
KW - poly-Si
KW - subthreshold swing (SS)
UR - http://www.scopus.com/inward/record.url?scp=77955173010&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955173010&partnerID=8YFLogxK
U2 - 10.1109/LED.2010.2050573
DO - 10.1109/LED.2010.2050573
M3 - Article
AN - SCOPUS:77955173010
VL - 31
SP - 824
EP - 826
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 8
M1 - 5497075
ER -