High-performance poly-Si TFTs using ultrathin HfSiOx gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications

M. H. Lee; S. L. Wu; M. J. Yang; K. J. Chen; G. L. Luo; L. S. Lee; M. J. Kao

doi:10.1109/LED.2010.2050573

High-performance poly-Si TFTs using ultrathin HfSiO_x gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications

M. H. Lee, S. L. Wu, M. J. Yang, K. J. Chen, G. L. Luo, L. S. Lee, M. J. Kao

Graduate Institute of Electro-Optical Science And Technology

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-κ metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 °C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 10⁸ at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S _ID and a smaller exponential frequency factor (γ) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.

Original language	English
Article number	5497075
Pages (from-to)	824-826
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	8
DOIs	https://doi.org/10.1109/LED.2010.2050573
Publication status	Published - 2010 Aug 1

Keywords

erms-HfSiO
high-κ
poly-Si
subthreshold swing (SS)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Lee, M. H., Wu, S. L., Yang, M. J., Chen, K. J., Luo, G. L., Lee, L. S., & Kao, M. J. (2010). High-performance poly-Si TFTs using ultrathin HfSiO_x gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications. IEEE Electron Device Letters, 31(8), 824-826. [5497075]. https://doi.org/10.1109/LED.2010.2050573

High-performance poly-Si TFTs using ultrathin HfSiO_x gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications. / Lee, M. H.; Wu, S. L.; Yang, M. J.; Chen, K. J.; Luo, G. L.; Lee, L. S.; Kao, M. J.

In: IEEE Electron Device Letters, Vol. 31, No. 8, 5497075, 01.08.2010, p. 824-826.

Research output: Contribution to journal › Article

@article{58c4963d5ed541ea8ae2f15c8ee05f7b,

title = "High-performance poly-Si TFTs using ultrathin HfSiOx gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications",

abstract = "High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-κ metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 °C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 108 at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S ID and a smaller exponential frequency factor (γ) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.",

keywords = "erms-HfSiO, high-κ, poly-Si, subthreshold swing (SS)",

author = "Lee, {M. H.} and Wu, {S. L.} and Yang, {M. J.} and Chen, {K. J.} and Luo, {G. L.} and Lee, {L. S.} and Kao, {M. J.}",

year = "2010",

month = aug,

day = "1",

doi = "10.1109/LED.2010.2050573",

language = "English",

volume = "31",

pages = "824--826",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - High-performance poly-Si TFTs using ultrathin HfSiOx gate dielectric for monolithic three-dimensional integrated circuits and system on glass applications

AU - Lee, M. H.

AU - Wu, S. L.

AU - Yang, M. J.

AU - Chen, K. J.

AU - Luo, G. L.

AU - Lee, L. S.

AU - Kao, M. J.

PY - 2010/8/1

Y1 - 2010/8/1

N2 - High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-κ metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 °C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 108 at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S ID and a smaller exponential frequency factor (γ) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.

AB - High-performance poly-Si thin-film transistors (TFTs) using an ultrathin high-κ metal gate stack with a subthreshold swing (SS) of 193 mV/dec when operating at room temperature and maximum thermal budget of 700 °C are readily compatible with monolithic 3-D integrated circuits (3D-ICs) and silicon-on-glass (SOG) applications. The SS is reduced to 31 mV/dec, and the on/off current ratio is increased to 108 at 77 K; the result is a significant reduction of leakage current and lower power consumption. Long-channel TFTs have a higher drain current noise spectral density S ID and a smaller exponential frequency factor (γ) due to the influence of numerous grain boundaries on carrier transport, as confirmed by gap state density extraction. These devices may pave the way for high-performance circuit designs and applications, such as monolithic 3D-ICs, SOG, and active-matrix organic LED.

KW - erms-HfSiO

KW - high-κ

KW - poly-Si

KW - subthreshold swing (SS)

UR - http://www.scopus.com/inward/record.url?scp=77955173010&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955173010&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2050573

DO - 10.1109/LED.2010.2050573

M3 - Article

AN - SCOPUS:77955173010

VL - 31

SP - 824

EP - 826

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

M1 - 5497075

ER -