High-performance MIM capacitors using a high- κ TiZrO dielectric

C. H. Cheng; H. C. Pan; S. H. Lin; H. H. Hsu; C. N. Hsiao; C. P. Chou; F. S. Yeh; Albert Chin

doi:10.1149/1.2993977

High-performance MIM capacitors using a high- κ TiZrO dielectric

C. H. Cheng
, H. C. Pan
, S. H. Lin
, H. H. Hsu
, C. N. Hsiao
, C. P. Chou
, F. S. Yeh
, Albert Chin

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-⁸ A cm² at -1 V was obtained for a 18 fFμ m² capacitance density. For a 5.5 fFμ m² capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

Original language	English
Pages (from-to)	G295-G298
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	12
DOIs	https://doi.org/10.1149/1.2993977
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.2993977

Cite this

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abstract = "We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.",

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doi = "10.1149/1.2993977",

language = "English",

volume = "155",

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TY - JOUR

T1 - High-performance MIM capacitors using a high- κ TiZrO dielectric

AU - Cheng, C. H.

AU - Pan, H. C.

AU - Lin, S. H.

AU - Hsu, H. H.

AU - Hsiao, C. N.

AU - Chou, C. P.

AU - Yeh, F. S.

AU - Chin, Albert

PY - 2008

Y1 - 2008

N2 - We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

AB - We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

UR - https://www.scopus.com/pages/publications/55049137194

UR - https://www.scopus.com/pages/publications/55049137194#tab=citedBy

U2 - 10.1149/1.2993977

DO - 10.1149/1.2993977

M3 - Article

AN - SCOPUS:55049137194

SN - 0013-4651

VL - 155

SP - G295-G298

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

ER -

High-performance MIM capacitors using a high- κ TiZrO dielectric

Abstract

ASJC Scopus subject areas

UN SDGs

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