High-performance MIM capacitors using a high- κ TiZrO dielectric

C. H. Cheng; H. C. Pan; S. H. Lin; H. H. Hsu; C. N. Hsiao; C. P. Chou; F. S. Yeh; Albert Chin

doi:10.1149/1.2993977

High-performance MIM capacitors using a high- κ TiZrO dielectric

C. H. Cheng
, H. C. Pan
, S. H. Lin
, H. H. Hsu
, C. N. Hsiao
, C. P. Chou
, F. S. Yeh
, Albert Chin

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-⁸ A cm² at -1 V was obtained for a 18 fFμ m² capacitance density. For a 5.5 fFμ m² capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

Original language	English
Pages (from-to)	G295-G298
Journal	Journal of the Electrochemical Society
Volume	155
Issue number	12
DOIs	https://doi.org/10.1149/1.2993977
Publication status	Published - 2008
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.2993977

Cite this

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abstract = "We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.",

author = "Cheng, \{C. H.\} and Pan, \{H. C.\} and Lin, \{S. H.\} and Hsu, \{H. H.\} and Hsiao, \{C. N.\} and Chou, \{C. P.\} and Yeh, \{F. S.\} and Albert Chin",

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doi = "10.1149/1.2993977",

language = "English",

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TY - JOUR

T1 - High-performance MIM capacitors using a high- κ TiZrO dielectric

AU - Cheng, C. H.

AU - Pan, H. C.

AU - Lin, S. H.

AU - Hsu, H. H.

AU - Hsiao, C. N.

AU - Chou, C. P.

AU - Yeh, F. S.

AU - Chin, Albert

PY - 2008

Y1 - 2008

N2 - We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

AB - We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

UR - https://www.scopus.com/pages/publications/55049137194

UR - https://www.scopus.com/pages/publications/55049137194#tab=citedBy

U2 - 10.1149/1.2993977

DO - 10.1149/1.2993977

M3 - Article

AN - SCOPUS:55049137194

SN - 0013-4651

VL - 155

SP - G295-G298

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 12

ER -

High-performance MIM capacitors using a high- κ TiZrO dielectric

Abstract

UN SDGs

ASJC Scopus subject areas

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