High-performance MIM capacitors using a high- κ TiZrO dielectric

Chun-Hu Cheng, H. C. Pan, S. H. Lin, H. H. Hsu, C. N. Hsiao, C. P. Chou, F. S. Yeh, Albert Chin

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10- 8 A cm 2 at -1 V was obtained for a 18 fFμ m 2 capacitance density. For a 5.5 fFμ m 2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume155
Issue number12
DOIs
Publication statusPublished - 2008 Nov 5

Fingerprint

capacitors
Capacitors
Capacitance
capacitance
Metals
insulators
metals
coefficients
Leakage currents
leakage
Electric potential
electric potential
Temperature
temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Cheng, C-H., Pan, H. C., Lin, S. H., Hsu, H. H., Hsiao, C. N., Chou, C. P., ... Chin, A. (2008). High-performance MIM capacitors using a high- κ TiZrO dielectric. Journal of the Electrochemical Society, 155(12). https://doi.org/10.1149/1.2993977

High-performance MIM capacitors using a high- κ TiZrO dielectric. / Cheng, Chun-Hu; Pan, H. C.; Lin, S. H.; Hsu, H. H.; Hsiao, C. N.; Chou, C. P.; Yeh, F. S.; Chin, Albert.

In: Journal of the Electrochemical Society, Vol. 155, No. 12, 05.11.2008.

Research output: Contribution to journalArticle

Cheng, C-H, Pan, HC, Lin, SH, Hsu, HH, Hsiao, CN, Chou, CP, Yeh, FS & Chin, A 2008, 'High-performance MIM capacitors using a high- κ TiZrO dielectric', Journal of the Electrochemical Society, vol. 155, no. 12. https://doi.org/10.1149/1.2993977
Cheng, Chun-Hu ; Pan, H. C. ; Lin, S. H. ; Hsu, H. H. ; Hsiao, C. N. ; Chou, C. P. ; Yeh, F. S. ; Chin, Albert. / High-performance MIM capacitors using a high- κ TiZrO dielectric. In: Journal of the Electrochemical Society. 2008 ; Vol. 155, No. 12.
@article{9a0bf89690ef4c8e803a57cc001efa0b,
title = "High-performance MIM capacitors using a high- κ TiZrO dielectric",
abstract = "We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10- 8 A cm 2 at -1 V was obtained for a 18 fFμ m 2 capacitance density. For a 5.5 fFμ m 2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.",
author = "Chun-Hu Cheng and Pan, {H. C.} and Lin, {S. H.} and Hsu, {H. H.} and Hsiao, {C. N.} and Chou, {C. P.} and Yeh, {F. S.} and Albert Chin",
year = "2008",
month = "11",
day = "5",
doi = "10.1149/1.2993977",
language = "English",
volume = "155",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "12",

}

TY - JOUR

T1 - High-performance MIM capacitors using a high- κ TiZrO dielectric

AU - Cheng, Chun-Hu

AU - Pan, H. C.

AU - Lin, S. H.

AU - Hsu, H. H.

AU - Hsiao, C. N.

AU - Chou, C. P.

AU - Yeh, F. S.

AU - Chin, Albert

PY - 2008/11/5

Y1 - 2008/11/5

N2 - We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10- 8 A cm 2 at -1 V was obtained for a 18 fFμ m 2 capacitance density. For a 5.5 fFμ m 2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

AB - We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10- 8 A cm 2 at -1 V was obtained for a 18 fFμ m 2 capacitance density. For a 5.5 fFμ m 2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

UR - http://www.scopus.com/inward/record.url?scp=55049137194&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55049137194&partnerID=8YFLogxK

U2 - 10.1149/1.2993977

DO - 10.1149/1.2993977

M3 - Article

VL - 155

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 12

ER -