High-performance MIM capacitors using a high- κ TiZrO dielectric

C. H. Cheng, H. C. Pan, S. H. Lin, H. H. Hsu, C. N. Hsiao, C. P. Chou, F. S. Yeh, Albert Chin

Research output: Contribution to journalArticle

10 Citations (Scopus)


We have fabricated high- κ NiTiZrOTaN metal-insulator-metal (MIM) capacitors. A low leakage current of 3.3× 10-8 A cm2 at -1 V was obtained for a 18 fFμ m2 capacitance density. For a 5.5 fFμ m2 capacitance density device, a small voltage coefficient of capacitance α of 105 ppm V2 and temperature coefficient of capacitance of 156 ppm°C were measured.

Original languageEnglish
Pages (from-to)G295-G298
JournalJournal of the Electrochemical Society
Issue number12
Publication statusPublished - 2008 Nov 5

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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    Cheng, C. H., Pan, H. C., Lin, S. H., Hsu, H. H., Hsiao, C. N., Chou, C. P., Yeh, F. S., & Chin, A. (2008). High-performance MIM capacitors using a high- κ TiZrO dielectric. Journal of the Electrochemical Society, 155(12), G295-G298. https://doi.org/10.1149/1.2993977