Abstract
Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10 -8 A/cm2 at -1V and high capacitance density of 17.5fF/μm2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/μm2, leakage current of 1.3x10-9A/cm2, and parabolic VCC value of 40ppm/V2 can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.
Original language | English |
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Title of host publication | 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 |
Pages | 67-68 |
Number of pages | 2 |
DOIs | |
Publication status | Published - 2009 |
Externally published | Yes |
Event | 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan Duration: 2009 Apr 27 → 2009 Apr 29 |
Other
Other | 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 |
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Country | Taiwan |
City | Hsinchu |
Period | 2009/04/27 → 2009/04/29 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering