High performance metal/insulator/metal capacitors using HfTiO as dielectric

Hsiao Hsuan Hsu, Chun Hu Cheng, Bing Yue Tsui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10 -8 A/cm2 at -1V and high capacitance density of 17.5fF/μm2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/μm2, leakage current of 1.3x10-9A/cm2, and parabolic VCC value of 40ppm/V2 can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.

Original languageEnglish
Title of host publication2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages67-68
Number of pages2
DOIs
Publication statusPublished - 2009
Externally publishedYes
Event2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan
Duration: 2009 Apr 272009 Apr 29

Other

Other2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
CountryTaiwan
CityHsinchu
Period09/4/2709/4/29

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Hsu, H. H., Cheng, C. H., & Tsui, B. Y. (2009). High performance metal/insulator/metal capacitors using HfTiO as dielectric. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 67-68). [5159294] https://doi.org/10.1109/VTSA.2009.5159294