High performance metal/insulator/metal capacitors using HfTiO as dielectric

Hsiao Hsuan Hsu; Chun Hu Cheng; Bing Yue Tsui

doi:10.1109/VTSA.2009.5159294

High performance metal/insulator/metal capacitors using HfTiO as dielectric

Hsiao Hsuan Hsu, Chun Hu Cheng, Bing Yue Tsui

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10 ^-8 A/cm² at -1V and high capacitance density of 17.5fF/μm² were obtained. A N₂-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/μm², leakage current of 1.3x10^-9A/cm², and parabolic VCC value of 40ppm/V² can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.

Original language	English
Title of host publication	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Pages	67-68
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2009.5159294
Publication status	Published - 2009
Externally published	Yes
Event	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan Duration: 2009 Apr 27 → 2009 Apr 29

Other

Other	2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
Country	Taiwan
City	Hsinchu
Period	09/4/27 → 09/4/29

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Hsu, H. H., Cheng, C. H., & Tsui, B. Y. (2009). High performance metal/insulator/metal capacitors using HfTiO as dielectric. In 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 (pp. 67-68). [5159294] https://doi.org/10.1109/VTSA.2009.5159294

Hsu, HH, Cheng, CH & Tsui, BY 2009, High performance metal/insulator/metal capacitors using HfTiO as dielectric. in 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09., 5159294, pp. 67-68, 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09, Hsinchu, Taiwan, 09/4/27. https://doi.org/10.1109/VTSA.2009.5159294

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abstract = "Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10 -8 A/cm2 at -1V and high capacitance density of 17.5fF/μm2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/μm2, leakage current of 1.3x10-9A/cm2, and parabolic VCC value of 40ppm/V2 can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.",

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N2 - Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10 -8 A/cm2 at -1V and high capacitance density of 17.5fF/μm2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/μm2, leakage current of 1.3x10-9A/cm2, and parabolic VCC value of 40ppm/V2 can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.

AB - Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10 -8 A/cm2 at -1V and high capacitance density of 17.5fF/μm2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/μm2, leakage current of 1.3x10-9A/cm2, and parabolic VCC value of 40ppm/V2 can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.

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Access to Document

10.1109/VTSA.2009.5159294