Abstract
Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10 -8 A/cm2 at -1V and high capacitance density of 17.5fF/μm2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/μm2, leakage current of 1.3x10-9A/cm2, and parabolic VCC value of 40ppm/V2 can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.
| Original language | English |
|---|---|
| Title of host publication | 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 |
| Pages | 67-68 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
| Event | 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 - Hsinchu, Taiwan Duration: 2009 Apr 27 → 2009 Apr 29 |
Other
| Other | 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09 |
|---|---|
| Country | Taiwan |
| City | Hsinchu |
| Period | 09/4/27 → 09/4/29 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
High performance metal/insulator/metal capacitors using HfTiO as dielectric. / Hsu, Hsiao Hsuan; Cheng, Chun Hu; Tsui, Bing Yue.
2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09. 2009. p. 67-68 5159294.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High performance metal/insulator/metal capacitors using HfTiO as dielectric
AU - Hsu, Hsiao Hsuan
AU - Cheng, Chun Hu
AU - Tsui, Bing Yue
PY - 2009
Y1 - 2009
N2 - Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10 -8 A/cm2 at -1V and high capacitance density of 17.5fF/μm2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/μm2, leakage current of 1.3x10-9A/cm2, and parabolic VCC value of 40ppm/V2 can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.
AB - Hafnium titanate (HfTiO) film was adapted as the insulator of MIM capacitors for RF/Analog ICs applications. Low leakage current of 3.4x10 -8 A/cm2 at -1V and high capacitance density of 17.5fF/μm2 were obtained. A N2-plasma treatment on HfTiO films can further reduce leakage current by two orders of magnitude and no apparent degradation is observed on the capacitance density and voltage coefficient of capacitance (VCC) properties. Capacitance density of 5.1fF/μm2, leakage current of 1.3x10-9A/cm2, and parabolic VCC value of 40ppm/V2 can be achieved by 51nm thick HfTiO film. These results meet the RF/analog requirements in 2012 predicted by ITRS.
UR - http://www.scopus.com/inward/record.url?scp=77950169035&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77950169035&partnerID=8YFLogxK
U2 - 10.1109/VTSA.2009.5159294
DO - 10.1109/VTSA.2009.5159294
M3 - Conference contribution
AN - SCOPUS:77950169035
SN - 9781424427857
SP - 67
EP - 68
BT - 2009 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA '09
ER -