High-performance metal-insulator-metal capacitors with HfTiO/Y 2O3 stacked dielectric

Bing Yue Tsui; Hsiao Hsuan Hsu; Chun Hu Cheng

doi:10.1109/LED.2010.2051316

High-performance metal-insulator-metal capacitors with HfTiO/Y ₂O₃ stacked dielectric

Bing Yue Tsui^*, Hsiao Hsuan Hsu, Chun Hu Cheng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The HfTiO/Y₂O₃ stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y₂O₃ layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y ₂O₃ cancels out the positive VCC-α of HfTiO to achieve low VCC-α. The MIM capacitor structure with HfTiO/Y ₂O₃ dielectric shows a capacitance density that is higher than 11 fF/μ² and VCC-α that is lower than 1222 ppm/V ². The leakage currents at.1 and.2 V are 6.4 and 14 nA/cm ², respectively. These results suggest that the HfTiO/Y ₂O₃ stacked dielectric is a promising candidate for MIM capacitors.

Original language	English
Article number	5492154
Pages (from-to)	875-877
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	8
DOIs	https://doi.org/10.1109/LED.2010.2051316
Publication status	Published - 2010 Aug
Externally published	Yes

Keywords

HfTiO
YO
high-dielectric constant dielectric
metal-insulator-metal (MIM) capacitor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2010.2051316

Cite this

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title = "High-performance metal-insulator-metal capacitors with HfTiO/Y 2O3 stacked dielectric",

abstract = "The HfTiO/Y2O3 stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y2O3 layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y 2O3 cancels out the positive VCC-α of HfTiO to achieve low VCC-α. The MIM capacitor structure with HfTiO/Y 2O3 dielectric shows a capacitance density that is higher than 11 fF/μ2 and VCC-α that is lower than 1222 ppm/V 2. The leakage currents at.1 and.2 V are 6.4 and 14 nA/cm 2, respectively. These results suggest that the HfTiO/Y 2O3 stacked dielectric is a promising candidate for MIM capacitors.",

keywords = "HfTiO, YO, high-dielectric constant dielectric, metal-insulator-metal (MIM) capacitor",

author = "Tsui, {Bing Yue} and Hsu, {Hsiao Hsuan} and Cheng, {Chun Hu}",

note = "Funding Information: Manuscript received April 5, 2010; revised May 10, 2010; accepted May 14, 2010. Date of publication June 28, 2010; date of current version July 23, 2010. This work was supported by the National Science Council of Taiwan under Contract NSC-96-2628-E-009-167-MY3. The review of this letter was arranged by Editor A. Z. Wang.",

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N2 - The HfTiO/Y2O3 stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y2O3 layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y 2O3 cancels out the positive VCC-α of HfTiO to achieve low VCC-α. The MIM capacitor structure with HfTiO/Y 2O3 dielectric shows a capacitance density that is higher than 11 fF/μ2 and VCC-α that is lower than 1222 ppm/V 2. The leakage currents at.1 and.2 V are 6.4 and 14 nA/cm 2, respectively. These results suggest that the HfTiO/Y 2O3 stacked dielectric is a promising candidate for MIM capacitors.

AB - The HfTiO/Y2O3 stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y2O3 layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y 2O3 cancels out the positive VCC-α of HfTiO to achieve low VCC-α. The MIM capacitor structure with HfTiO/Y 2O3 dielectric shows a capacitance density that is higher than 11 fF/μ2 and VCC-α that is lower than 1222 ppm/V 2. The leakage currents at.1 and.2 V are 6.4 and 14 nA/cm 2, respectively. These results suggest that the HfTiO/Y 2O3 stacked dielectric is a promising candidate for MIM capacitors.

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