High-performance metal-insulator-metal capacitors with HfTiO/Y 2O3 stacked dielectric

Bing Yue Tsui, Hsiao Hsuan Hsu, Chun-Hu Cheng

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The HfTiO/Y2O3 stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y2O3 layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y 2O3 cancels out the positive VCC-α of HfTiO to achieve low VCC-α. The MIM capacitor structure with HfTiO/Y 2O3 dielectric shows a capacitance density that is higher than 11 fF/μ2 and VCC-α that is lower than 1222 ppm/V 2. The leakage currents at.1 and.2 V are 6.4 and 14 nA/cm 2, respectively. These results suggest that the HfTiO/Y 2O3 stacked dielectric is a promising candidate for MIM capacitors.

Original languageEnglish
Article number5492154
Pages (from-to)875-877
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number8
DOIs
Publication statusPublished - 2010 Aug 1

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Capacitors
Metals
Capacitance
Electric potential
Leakage currents
Current density
Electrodes

Keywords

  • HfTiO
  • YO
  • high-dielectric constant dielectric
  • metal-insulator-metal (MIM) capacitor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

High-performance metal-insulator-metal capacitors with HfTiO/Y 2O3 stacked dielectric. / Tsui, Bing Yue; Hsu, Hsiao Hsuan; Cheng, Chun-Hu.

In: IEEE Electron Device Letters, Vol. 31, No. 8, 5492154, 01.08.2010, p. 875-877.

Research output: Contribution to journalArticle

@article{2d83f76027c84901b8e5df031d442257,
title = "High-performance metal-insulator-metal capacitors with HfTiO/Y 2O3 stacked dielectric",
abstract = "The HfTiO/Y2O3 stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y2O3 layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y 2O3 cancels out the positive VCC-α of HfTiO to achieve low VCC-α. The MIM capacitor structure with HfTiO/Y 2O3 dielectric shows a capacitance density that is higher than 11 fF/μ2 and VCC-α that is lower than 1222 ppm/V 2. The leakage currents at.1 and.2 V are 6.4 and 14 nA/cm 2, respectively. These results suggest that the HfTiO/Y 2O3 stacked dielectric is a promising candidate for MIM capacitors.",
keywords = "HfTiO, YO, high-dielectric constant dielectric, metal-insulator-metal (MIM) capacitor",
author = "Tsui, {Bing Yue} and Hsu, {Hsiao Hsuan} and Chun-Hu Cheng",
year = "2010",
month = "8",
day = "1",
doi = "10.1109/LED.2010.2051316",
language = "English",
volume = "31",
pages = "875--877",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - High-performance metal-insulator-metal capacitors with HfTiO/Y 2O3 stacked dielectric

AU - Tsui, Bing Yue

AU - Hsu, Hsiao Hsuan

AU - Cheng, Chun-Hu

PY - 2010/8/1

Y1 - 2010/8/1

N2 - The HfTiO/Y2O3 stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y2O3 layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y 2O3 cancels out the positive VCC-α of HfTiO to achieve low VCC-α. The MIM capacitor structure with HfTiO/Y 2O3 dielectric shows a capacitance density that is higher than 11 fF/μ2 and VCC-α that is lower than 1222 ppm/V 2. The leakage currents at.1 and.2 V are 6.4 and 14 nA/cm 2, respectively. These results suggest that the HfTiO/Y 2O3 stacked dielectric is a promising candidate for MIM capacitors.

AB - The HfTiO/Y2O3 stacked dielectric is proposed as the dielectric of metal-insulator-metal (MIM) capacitor. Y2O3 is more thermodynamically stable than HfTiO as contacting with TaN electrode. Interfacial layer thickness and leakage current density can be reduced by inserting a thin Y2O3 layer between HfTiO and TaN. The negative quadruple voltage coefficient of capacitance (VCC-α) of Y 2O3 cancels out the positive VCC-α of HfTiO to achieve low VCC-α. The MIM capacitor structure with HfTiO/Y 2O3 dielectric shows a capacitance density that is higher than 11 fF/μ2 and VCC-α that is lower than 1222 ppm/V 2. The leakage currents at.1 and.2 V are 6.4 and 14 nA/cm 2, respectively. These results suggest that the HfTiO/Y 2O3 stacked dielectric is a promising candidate for MIM capacitors.

KW - HfTiO

KW - YO

KW - high-dielectric constant dielectric

KW - metal-insulator-metal (MIM) capacitor

UR - http://www.scopus.com/inward/record.url?scp=77955161627&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955161627&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2051316

DO - 10.1109/LED.2010.2051316

M3 - Article

AN - SCOPUS:77955161627

VL - 31

SP - 875

EP - 877

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 8

M1 - 5492154

ER -