High-performance metal-insulator-metal capacitor using quality properties of high- κ TiPrO dielectric

In this paper, we demonstrate excellent material characteristics of TiPrO and high-density Tix Pr1-x O (x≈0.67) metal-insulator-metal (MIM) capacitors using high-work-function (∼5.3 eV) Ir top electrode. Low leakage current of 7× 10-9 A cm2 at -1 V and high 16 fFμ m2 capacitance density are achieved for 400°C anneal TiPrO, which also meets the International Technology Roadmap for Semiconductors goals (at year 2018) of 10 fFμ m2 density and J (CV) <7 fA (pFV). Furthermore, the improved high 20 fFμ m2 capacitance density TiPrO MIM was obtained at a higher anneal temperature, where a low leakage current of 1.2× 10-7 A cm2 was measured at -1 V. These good performances indicate that TiPrO MIM is suitable for analog/radio frequency integrated circuits.