High-performance metal-insulator-metal capacitor using quality properties of high- κ TiPrO dielectric

Chingchien Huang*, Chun Hu Cheng, Ko Tao Lee, Bo Heng Liou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


In this paper, we demonstrate excellent material characteristics of TiPrO and high-density Tix Pr1-x O (x≈0.67) metal-insulator-metal (MIM) capacitors using high-work-function (∼5.3 eV) Ir top electrode. Low leakage current of 7× 10-9 A cm2 at -1 V and high 16 fFμ m2 capacitance density are achieved for 400°C anneal TiPrO, which also meets the International Technology Roadmap for Semiconductors goals (at year 2018) of 10 fFμ m2 density and J (CV) <7 fA (pFV). Furthermore, the improved high 20 fFμ m2 capacitance density TiPrO MIM was obtained at a higher anneal temperature, where a low leakage current of 1.2× 10-7 A cm2 was measured at -1 V. These good performances indicate that TiPrO MIM is suitable for analog/radio frequency integrated circuits.

Original languageEnglish
Pages (from-to)G23-G27
JournalJournal of the Electrochemical Society
Issue number4
Publication statusPublished - 2009
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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