High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application

C. C. Huang; C. H. Cheng; Albert Chin; C. P. Chou

doi:10.1149/1.2981616

High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application

C. C. Huang, C. H. Cheng, Albert Chin, C. P. Chou

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper, we demonstrate high quality material TiPrO and high density Ti_xPr_1-xO (x∼0.67) metal-insulator-metal (MIM) capacitors using high work function (∼5.3 eV) Ir top electrode. Very low leakage current of 7 10-9 A/cm² at -1 V and high 16 fF/μm ² capacitance density are achieved for 400 °C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/μm² density and J/(C.V)<7 fA/(pF.V). Furthermore, the improved high 20 fF/μm² capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10^-7 A/cm² is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.

Original language	English
Title of host publication	ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Publisher	Electrochemical Society Inc.
Pages	341-352
Number of pages	12
Edition	5
ISBN (Print)	9781566776516
DOIs	https://doi.org/10.1149/1.2981616
Publication status	Published - 2009
Externally published	Yes
Event	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States Duration: 2008 Oct 13 → 2008 Oct 15

Publication series

Name	ECS Transactions
Number	5
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	2008/10/13 → 2008/10/15

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.2981616

Cite this

High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application. / Huang, C. C.; Cheng, C. H.; Chin, Albert et al.
ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. Electrochemical Society Inc., 2009. p. 341-352 (ECS Transactions; Vol. 16, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Huang, CC, Cheng, CH, Chin, A & Chou, CP 2009, High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 edn, ECS Transactions, no. 5, vol. 16, Electrochemical Society Inc., pp. 341-352, Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting, Honolulu, HI, United States, 2008/10/13. https://doi.org/10.1149/1.2981616

@inproceedings{288892df0bae437b95c18b9012508a05,

title = "High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application",

abstract = "In this paper, we demonstrate high quality material TiPrO and high density TixPr1-xO (x∼0.67) metal-insulator-metal (MIM) capacitors using high work function (∼5.3 eV) Ir top electrode. Very low leakage current of 7 10-9 A/cm2 at -1 V and high 16 fF/μm 2 capacitance density are achieved for 400 °C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/μm2 density and J/(C.V)<7 fA/(pF.V). Furthermore, the improved high 20 fF/μm2 capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10-7 A/cm2 is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.",

author = "Huang, {C. C.} and Cheng, {C. H.} and Albert Chin and Chou, {C. P.}",

year = "2009",

doi = "10.1149/1.2981616",

language = "English",

isbn = "9781566776516",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "5",

pages = "341--352",

booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6",

edition = "5",

note = "Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting ; Conference date: 13-10-2008 Through 15-10-2008",

}

TY - GEN

T1 - High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application

AU - Huang, C. C.

AU - Cheng, C. H.

AU - Chin, Albert

AU - Chou, C. P.

PY - 2009

Y1 - 2009

N2 - In this paper, we demonstrate high quality material TiPrO and high density TixPr1-xO (x∼0.67) metal-insulator-metal (MIM) capacitors using high work function (∼5.3 eV) Ir top electrode. Very low leakage current of 7 10-9 A/cm2 at -1 V and high 16 fF/μm 2 capacitance density are achieved for 400 °C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/μm2 density and J/(C.V)<7 fA/(pF.V). Furthermore, the improved high 20 fF/μm2 capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10-7 A/cm2 is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.

AB - In this paper, we demonstrate high quality material TiPrO and high density TixPr1-xO (x∼0.67) metal-insulator-metal (MIM) capacitors using high work function (∼5.3 eV) Ir top electrode. Very low leakage current of 7 10-9 A/cm2 at -1 V and high 16 fF/μm 2 capacitance density are achieved for 400 °C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/μm2 density and J/(C.V)<7 fA/(pF.V). Furthermore, the improved high 20 fF/μm2 capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10-7 A/cm2 is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.

UR - http://www.scopus.com/inward/record.url?scp=63149121270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63149121270&partnerID=8YFLogxK

U2 - 10.1149/1.2981616

DO - 10.1149/1.2981616

M3 - Conference contribution

AN - SCOPUS:63149121270

SN - 9781566776516

T3 - ECS Transactions

SP - 341

EP - 352

BT - ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6

PB - Electrochemical Society Inc.

T2 - Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting

Y2 - 13 October 2008 through 15 October 2008

ER -

High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application

Abstract

Publication series

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this