High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application

C. C. Huang, Chun-Hu Cheng, Albert Chin, C. P. Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we demonstrate high quality material TiPrO and high density TixPr1-xO (x∼0.67) metal-insulator-metal (MIM) capacitors using high work function (∼5.3 eV) Ir top electrode. Very low leakage current of 7 10-9 A/cm2 at -1 V and high 16 fF/μm 2 capacitance density are achieved for 400 °C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/μm2 density and J/(C.V)<7 fA/(pF.V). Furthermore, the improved high 20 fF/μm2 capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10-7 A/cm2 is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Pages341-352
Number of pages12
Edition5
DOIs
Publication statusPublished - 2008 Dec 1
EventPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameECS Transactions
Number5
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/15

Fingerprint

Capacitors
Metals
Leakage currents
Capacitance
Analog integrated circuits
Annealing
Electrodes
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Huang, C. C., Cheng, C-H., Chin, A., & Chou, C. P. (2008). High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 341-352). (ECS Transactions; Vol. 16, No. 5). https://doi.org/10.1149/1.2981616

High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application. / Huang, C. C.; Cheng, Chun-Hu; Chin, Albert; Chou, C. P.

ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. 2008. p. 341-352 (ECS Transactions; Vol. 16, No. 5).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Huang, CC, Cheng, C-H, Chin, A & Chou, CP 2008, High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application. in ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 edn, ECS Transactions, no. 5, vol. 16, pp. 341-352, Physics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting, Honolulu, HI, United States, 08/10/13. https://doi.org/10.1149/1.2981616
Huang CC, Cheng C-H, Chin A, Chou CP. High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5 ed. 2008. p. 341-352. (ECS Transactions; 5). https://doi.org/10.1149/1.2981616
Huang, C. C. ; Cheng, Chun-Hu ; Chin, Albert ; Chou, C. P. / High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application. ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6. 5. ed. 2008. pp. 341-352 (ECS Transactions; 5).
@inproceedings{01d74bf4dddd46ed9aca0fa8d410b7e2,
title = "High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application",
abstract = "In this paper, we demonstrate high quality material TiPrO and high density TixPr1-xO (x∼0.67) metal-insulator-metal (MIM) capacitors using high work function (∼5.3 eV) Ir top electrode. Very low leakage current of 7 10-9 A/cm2 at -1 V and high 16 fF/μm 2 capacitance density are achieved for 400 °C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/μm2 density and J/(C.V)<7 fA/(pF.V). Furthermore, the improved high 20 fF/μm2 capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10-7 A/cm2 is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.",
author = "Huang, {C. C.} and Chun-Hu Cheng and Albert Chin and Chou, {C. P.}",
year = "2008",
month = "12",
day = "1",
doi = "10.1149/1.2981616",
language = "English",
isbn = "9781566776516",
series = "ECS Transactions",
number = "5",
pages = "341--352",
booktitle = "ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6",
edition = "5",

}

TY - GEN

T1 - High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application

AU - Huang, C. C.

AU - Cheng, Chun-Hu

AU - Chin, Albert

AU - Chou, C. P.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - In this paper, we demonstrate high quality material TiPrO and high density TixPr1-xO (x∼0.67) metal-insulator-metal (MIM) capacitors using high work function (∼5.3 eV) Ir top electrode. Very low leakage current of 7 10-9 A/cm2 at -1 V and high 16 fF/μm 2 capacitance density are achieved for 400 °C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/μm2 density and J/(C.V)<7 fA/(pF.V). Furthermore, the improved high 20 fF/μm2 capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10-7 A/cm2 is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.

AB - In this paper, we demonstrate high quality material TiPrO and high density TixPr1-xO (x∼0.67) metal-insulator-metal (MIM) capacitors using high work function (∼5.3 eV) Ir top electrode. Very low leakage current of 7 10-9 A/cm2 at -1 V and high 16 fF/μm 2 capacitance density are achieved for 400 °C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/μm2 density and J/(C.V)<7 fA/(pF.V). Furthermore, the improved high 20 fF/μm2 capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10-7 A/cm2 is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.

UR - http://www.scopus.com/inward/record.url?scp=63149121270&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=63149121270&partnerID=8YFLogxK

U2 - 10.1149/1.2981616

DO - 10.1149/1.2981616

M3 - Conference contribution

AN - SCOPUS:63149121270

SN - 9781566776516

T3 - ECS Transactions

SP - 341

EP - 352

BT - ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6

ER -