High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application

C. C. Huang, C. H. Cheng, Albert Chin, C. P. Chou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we demonstrate high quality material TiPrO and high density TixPr1-xO (x∼0.67) metal-insulator-metal (MIM) capacitors using high work function (∼5.3 eV) Ir top electrode. Very low leakage current of 7 10-9 A/cm2 at -1 V and high 16 fF/μm 2 capacitance density are achieved for 400 °C anneal TiPrO, which also meets the ITRS goals (at year 2018) of 10 fF/μm2 density and J/(C.V)<7 fA/(pF.V). Furthermore, the improved high 20 fF/μm2 capacitance density TiPrO MIM is obtained at higher annealing temperature, where low leakage current 1.2 10-7 A/cm2 is measured at -1 V. These good performances indicate TiPrO MIM is suitable for analog/RF ICs Applications.

Original languageEnglish
Title of host publicationECS Transactions - Physics and Technology of High-k Gate Dielectrics 6
Pages341-352
Number of pages12
Edition5
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
EventPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting - Honolulu, HI, United States
Duration: 2008 Oct 132008 Oct 15

Publication series

NameECS Transactions
Number5
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherPhysics and Technology of High-k Gate Dielectrics 6 - 214th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period08/10/1308/10/15

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Huang, C. C., Cheng, C. H., Chin, A., & Chou, C. P. (2008). High performance Ir/TiPrO/tan MIM capacitors for analog ICs Application. In ECS Transactions - Physics and Technology of High-k Gate Dielectrics 6 (5 ed., pp. 341-352). (ECS Transactions; Vol. 16, No. 5). https://doi.org/10.1149/1.2981616