High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes

Yu Ting Huang, Yi Hsun Chen, Yi Ju Ho, Shih Wei Huang, Yih Ren Chang, Kenji Watanabe, Takashi Taniguchi, Hsiang Chih Chiu, Chi Te Liang, Raman Sankar, Fang Cheng Chou, Chun Wei Chen, Wei Hua Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The electrical contact to two-dimensional (2D) semiconductor materials is decisive to the electronic performance of 2D semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, Ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that a nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by Ohmic contact behavior at T = 2 K and a low barrier height, B = 50 meV. This Ohmic contact enables demonstration of an on-current as large as 410 μA/μm, which is among the highest values achieved in FEDs based on layered semiconductors. A high electron mobility of 3700 and 1000 cm 2 /V·s is achieved with the two-terminal In-InSe FEDs at T = 2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D semiconductor-based electronics.

Original languageEnglish
Pages (from-to)33450-33456
Number of pages7
JournalACS Applied Materials and Interfaces
Volume10
Issue number39
DOIs
Publication statusPublished - 2018 Oct 3

Fingerprint

Indium
Ohmic contacts
Transistors
Electrodes
Field effect semiconductor devices
Demonstrations
Semiconductor materials
Electron mobility
Carrier mobility
Contact resistance
Electronic equipment
X ray photoelectron spectroscopy
Metals
Geometry

Keywords

  • 2D semiconductors
  • high carrier mobility
  • nanoelectronics
  • nonrectifying barrier
  • Ohmic contact

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes. / Huang, Yu Ting; Chen, Yi Hsun; Ho, Yi Ju; Huang, Shih Wei; Chang, Yih Ren; Watanabe, Kenji; Taniguchi, Takashi; Chiu, Hsiang Chih; Liang, Chi Te; Sankar, Raman; Chou, Fang Cheng; Chen, Chun Wei; Wang, Wei Hua.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 39, 03.10.2018, p. 33450-33456.

Research output: Contribution to journalArticle

Huang, YT, Chen, YH, Ho, YJ, Huang, SW, Chang, YR, Watanabe, K, Taniguchi, T, Chiu, HC, Liang, CT, Sankar, R, Chou, FC, Chen, CW & Wang, WH 2018, 'High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes', ACS Applied Materials and Interfaces, vol. 10, no. 39, pp. 33450-33456. https://doi.org/10.1021/acsami.8b10576
Huang, Yu Ting ; Chen, Yi Hsun ; Ho, Yi Ju ; Huang, Shih Wei ; Chang, Yih Ren ; Watanabe, Kenji ; Taniguchi, Takashi ; Chiu, Hsiang Chih ; Liang, Chi Te ; Sankar, Raman ; Chou, Fang Cheng ; Chen, Chun Wei ; Wang, Wei Hua. / High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 39. pp. 33450-33456.
@article{787c0c12a2aa4e6cb2cd59627ad67a46,
title = "High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes",
abstract = "The electrical contact to two-dimensional (2D) semiconductor materials is decisive to the electronic performance of 2D semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, Ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that a nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by Ohmic contact behavior at T = 2 K and a low barrier height, B = 50 meV. This Ohmic contact enables demonstration of an on-current as large as 410 μA/μm, which is among the highest values achieved in FEDs based on layered semiconductors. A high electron mobility of 3700 and 1000 cm 2 /V·s is achieved with the two-terminal In-InSe FEDs at T = 2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D semiconductor-based electronics.",
keywords = "2D semiconductors, high carrier mobility, nanoelectronics, nonrectifying barrier, Ohmic contact",
author = "Huang, {Yu Ting} and Chen, {Yi Hsun} and Ho, {Yi Ju} and Huang, {Shih Wei} and Chang, {Yih Ren} and Kenji Watanabe and Takashi Taniguchi and Chiu, {Hsiang Chih} and Liang, {Chi Te} and Raman Sankar and Chou, {Fang Cheng} and Chen, {Chun Wei} and Wang, {Wei Hua}",
year = "2018",
month = "10",
day = "3",
doi = "10.1021/acsami.8b10576",
language = "English",
volume = "10",
pages = "33450--33456",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "39",

}

TY - JOUR

T1 - High-Performance InSe Transistors with Ohmic Contact Enabled by Nonrectifying Barrier-Type Indium Electrodes

AU - Huang, Yu Ting

AU - Chen, Yi Hsun

AU - Ho, Yi Ju

AU - Huang, Shih Wei

AU - Chang, Yih Ren

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Chiu, Hsiang Chih

AU - Liang, Chi Te

AU - Sankar, Raman

AU - Chou, Fang Cheng

AU - Chen, Chun Wei

AU - Wang, Wei Hua

PY - 2018/10/3

Y1 - 2018/10/3

N2 - The electrical contact to two-dimensional (2D) semiconductor materials is decisive to the electronic performance of 2D semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, Ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that a nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by Ohmic contact behavior at T = 2 K and a low barrier height, B = 50 meV. This Ohmic contact enables demonstration of an on-current as large as 410 μA/μm, which is among the highest values achieved in FEDs based on layered semiconductors. A high electron mobility of 3700 and 1000 cm 2 /V·s is achieved with the two-terminal In-InSe FEDs at T = 2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D semiconductor-based electronics.

AB - The electrical contact to two-dimensional (2D) semiconductor materials is decisive to the electronic performance of 2D semiconductor field-effect devices (FEDs). The presence of a Schottky barrier often leads to a large contact resistance, which seriously limits the channel conductance and carrier mobility measured in a two-terminal geometry. In contrast, Ohmic contact is desirable and can be achieved by the presence of a nonrectifying or tunneling barrier. Here, we demonstrate that a nonrectifying barrier can be realized by contacting indium (In), a low work function metal, with layered InSe because of a favorable band alignment at the In-InSe interface. The nonrectifying barrier is manifested by Ohmic contact behavior at T = 2 K and a low barrier height, B = 50 meV. This Ohmic contact enables demonstration of an on-current as large as 410 μA/μm, which is among the highest values achieved in FEDs based on layered semiconductors. A high electron mobility of 3700 and 1000 cm 2 /V·s is achieved with the two-terminal In-InSe FEDs at T = 2 K and room temperature, respectively, which can be attributed to enhanced quality of both conduction channel and the contacts. The improvement in the contact quality is further proven by an X-ray photoelectron spectroscopy study, which suggests that a reduction effect occurs at the In-InSe interface. The demonstration of high-performance In-InSe FEDs indicates a viable interface engineering method for next-generation, 2D semiconductor-based electronics.

KW - 2D semiconductors

KW - high carrier mobility

KW - nanoelectronics

KW - nonrectifying barrier

KW - Ohmic contact

UR - http://www.scopus.com/inward/record.url?scp=85053885088&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85053885088&partnerID=8YFLogxK

U2 - 10.1021/acsami.8b10576

DO - 10.1021/acsami.8b10576

M3 - Article

C2 - 30191709

AN - SCOPUS:85053885088

VL - 10

SP - 33450

EP - 33456

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 39

ER -