INIS
buffers
100%
capacitance
25%
density
25%
devices
25%
layers
100%
leakage
50%
low temperature
25%
mobility
25%
performance
100%
polycarbonates
100%
substrates
100%
temperature range 0273-0400 k
25%
thin films
100%
titanium oxides
100%
transistors
100%
voltage
50%
yttrium oxides
50%
Engineering
Buffer Layer
100%
Capacitance
33%
Density
33%
Electric Potential
66%
Energy Gap
33%
Fields
33%
Good Performance
33%
Integration
33%
Low-Temperature
33%
Performance
100%
Polycarbonate
100%
Room Temperature
33%
Substrates
100%
Material Science
Buffer Layer
100%
Capacitance
33%
Density
33%
Devices
33%
Flexible Substrate
33%
Polycarbonate
100%
Temperature
66%
Thin-Film Transistor
100%
Titanium Dioxide
100%
Titanium Oxide
33%
Computer Science
Good Performance
50%
High Temperature
50%
Room Temperature
50%
Threshold Voltage
100%