High performance IGZO/TiO2 thin film transistors using Y 2O3 buffer layers on polycarbonate substrate

H. H. Hsu, C. Y. Chang, Chun-Hu Cheng

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm2/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-κ TiO 2.

Original languageEnglish
Pages (from-to)817-820
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume112
Issue number4
DOIs
Publication statusPublished - 2013 Sep 1

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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