Abstract
In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm2/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-κ TiO 2.
| Original language | English |
|---|---|
| Pages (from-to) | 817-820 |
| Number of pages | 4 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 112 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2013 Sep 1 |
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
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Hsu, H. H., Chang, C. Y., & Cheng, C-H. (2013). High performance IGZO/TiO2 thin film transistors using Y 2O3 buffer layers on polycarbonate substrate. Applied Physics A: Materials Science and Processing, 112(4), 817-820. https://doi.org/10.1007/s00339-013-7680-9