High performance IGZO/TiO2 thin film transistors using Y 2O3 buffer layers on polycarbonate substrate

H. H. Hsu; C. Y. Chang; Chun-Hu Cheng

doi:10.1007/s00339-013-7680-9

High performance IGZO/TiO₂ thin film transistors using Y ₂O₃ buffer layers on polycarbonate substrate

H. H. Hsu, C. Y. Chang, Chun-Hu Cheng

Department of Mechartronic Engineering

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO₂ TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO₂ TFT with Y₂O₃ buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm²/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y₂O₃ and low-temperature higher-κ TiO ₂.

Original language	English
Pages (from-to)	817-820
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	112
Issue number	4
DOIs	https://doi.org/10.1007/s00339-013-7680-9
Publication status	Published - 2013 Sep 1

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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abstract = "In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm2/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-κ TiO 2.",

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AB - In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm2/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-κ TiO 2.

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High performance IGZO/TiO₂ thin film transistors using Y ₂O₃ buffer layers on polycarbonate substrate

Abstract

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