Abstract
In this work, we fabricate IGZO TFT devices on flexible substrate at room temperature. The IGZO/TiO2 TFT has small subthreshold swing of 0.16 V/dec, but suffers large gate leakage and negative threshold voltage. However, the TiO2 TFT with Y2O3 buffer layers shows improved characteristics including a low threshold voltage of 0.55 V, a small sub-threshold swing of 0.175 V/decade and high field-effect mobility of 43 cm2/Vs. Such good performance can be attributed to the enhanced capacitance density and lowered gate leakage owing to the integration of large band gap Y2O3 and low-temperature higher-κ TiO 2.
Original language | English |
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Pages (from-to) | 817-820 |
Number of pages | 4 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 112 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2013 Sep 1 |
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)