This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm2/V · at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 × 10-10 A/μm off-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 °C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-κ LaAlO3 dielectric without using an interfacial layer. Using a different high-κ HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.
|Number of pages||6|
|Journal||IEEE Transactions on Electron Devices|
|Publication status||Published - 2010 Dec|
- Equivalent oxide thickness (EOT)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering