High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO 3 gate dielectrics

W. B. Chen; C. H. Cheng; Albert Chin

doi:10.1109/TED.2010.2079270

High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO ₃ gate dielectrics

W. B. Chen, C. H. Cheng, Albert Chin

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm²/V · at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 × 10^-10 A/μm off-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 °C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-κ LaAlO₃ dielectric without using an interfacial layer. Using a different high-κ HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.

Original language	English
Article number	5598525
Pages (from-to)	3525-3530
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	12
DOIs	https://doi.org/10.1109/TED.2010.2079270
Publication status	Published - 2010 Dec
Externally published	Yes

Keywords

Equivalent oxide thickness (EOT)
Ge
LaAlO
TaN
high-κ
n-MOSFETs

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/TED.2010.2079270

Cite this

@article{2c5c62641fee4d148f1df6c1f3d38a3e,

title = "High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO 3 gate dielectrics",

abstract = "This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm2/V · at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 × 10-10 A/μm off-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 °C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-κ LaAlO3 dielectric without using an interfacial layer. Using a different high-κ HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.",

keywords = "Equivalent oxide thickness (EOT), Ge, LaAlO, TaN, high-κ, n-MOSFETs",

author = "Chen, {W. B.} and Cheng, {C. H.} and Albert Chin",

note = "Funding Information: Manuscript received February 4, 2010; revised June 4, 2010; accepted September 10, 2010. Date of publication October 11, 2010; date of current version November 19, 2010. This work was supported in part by the National Nano Project of the National Science Council of Taiwan. The review of this brief was arranged by Editor J. Woo.",

year = "2010",

month = dec,

doi = "10.1109/TED.2010.2079270",

language = "English",

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journal = "IEEE Transactions on Electron Devices",

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T1 - High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO 3 gate dielectrics

AU - Chen, W. B.

AU - Cheng, C. H.

AU - Chin, Albert

N1 - Funding Information: Manuscript received February 4, 2010; revised June 4, 2010; accepted September 10, 2010. Date of publication October 11, 2010; date of current version November 19, 2010. This work was supported in part by the National Nano Project of the National Science Council of Taiwan. The review of this brief was arranged by Editor J. Woo.

PY - 2010/12

Y1 - 2010/12

N2 - This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm2/V · at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 × 10-10 A/μm off-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 °C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-κ LaAlO3 dielectric without using an interfacial layer. Using a different high-κ HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.

AB - This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm2/V · at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 × 10-10 A/μm off-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 °C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-κ LaAlO3 dielectric without using an interfacial layer. Using a different high-κ HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.

KW - Equivalent oxide thickness (EOT)

KW - Ge

KW - LaAlO

KW - TaN

KW - high-κ

KW - n-MOSFETs

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