High-performance gate-first epitaxial Ge n-MOSFETs on Si With LaAlO 3 gate dielectrics

W. B. Chen, C. H. Cheng, Albert Chin

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

This brief presents high-performance Ge n-MOSFETs with good high-field mobility of 218 cm2/V · at 0.5 MV/cm, low subthreshold swing (SS) of 108 mV/dec, small equivalent oxide thickness (EOT) of 1.6 nm, low 7 × 10-10 A/μm off-state leakage, small bias temperature instability of 31 mV at 1.2 V overdrive and 85 °C, and full process compatibility with current very large-scale integration fabrication. These are one of the best SS and high-field mobility data among gate-first Ge n-MOSFETs using epitaxial Ge on 6-in Si wafer and proper high-κ LaAlO3 dielectric without using an interfacial layer. Using a different high-κ HfAlO gate dielectric, the Ge n-MOSFETs showed poor leakage, large flatband voltage shift, and degraded EOT.

Original languageEnglish
Article number5598525
Pages (from-to)3525-3530
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume57
Issue number12
DOIs
Publication statusPublished - 2010 Dec 1

Keywords

  • Equivalent oxide thickness (EOT)
  • Ge
  • LaAlO
  • TaN
  • high-κ
  • n-MOSFETs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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