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High performance bipolar spin transistor
C. K. Lo
*
, Y. W. Huang
*
Corresponding author for this work
Research output
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Contribution to conference
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peer-review
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INIS
devices
14%
electrons
14%
leakage
14%
magnetoresistance
57%
p-n junctions
14%
performance
100%
potential barriers
14%
schottky barrier diodes
14%
spin
100%
temperature range 0273-0400 k
28%
transistors
100%
tunneling
42%
Material Science
Giant Magnetoresistance
20%
Memory Effect
20%
Schottky Diode
20%
Transistor
100%
Tunneling Magnetoresistance
20%
Physics
Giant Magnetoresistance
50%