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High performance bipolar spin transistor
C. K. Lo
*
, Y. W. Huang
*
Corresponding author for this work
Research output
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Physics
Spin
100%
Transistor
100%
Transferring
16%
Technology
16%
Electron Spin
16%
Potential Barrier
16%
Schottky Diode
16%
Memory Effect
16%
Magnetic Phenomena
16%
INIS
transistors
100%
magnetoresistance
57%
tunneling
42%
leakage
14%
electrons
14%
schottky barrier diodes
14%
p-n junctions
14%
potential barriers
14%
Material Science
Transistor
100%
Giant Magnetoresistance
20%
Tunneling Magnetoresistance
20%
Memory Effect
20%
Schottky Diode
20%