High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

Yu Chiang Chao; Mu Chun Niu; Hsiao Wen Zan; Hsin Fei Meng; Ming Che Ku

doi:10.1016/j.orgel.2010.09.023

High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

Yu Chiang Chao
, Mu Chun Niu
, Hsiao Wen Zan^*
, Hsin Fei Meng
, Ming Che Ku

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10^-5 cm²/Vs to 10^-3 cm ²/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm² while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

Original language	English
Pages (from-to)	78-82
Number of pages	5
Journal	Organic Electronics
Volume	12
Issue number	1
DOIs	https://doi.org/10.1016/j.orgel.2010.09.023
Publication status	Published - 2011 Jan
Externally published	Yes

Keywords

Space-charge-limited current
Vertical transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.orgel.2010.09.023

Cite this

@article{264450a4e7424b51bb80f78cf85af192,

title = "High-mobility polymer space-charge-limited transistor with grid-induced crystallinity",

abstract = "The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.",

keywords = "Space-charge-limited current, Vertical transistor",

author = "Chao, \{Yu Chiang\} and Niu, \{Mu Chun\} and Zan, \{Hsiao Wen\} and Meng, \{Hsin Fei\} and Ku, \{Ming Che\}",

note = "Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC98-2628-M-009-001.",

year = "2011",

month = jan,

doi = "10.1016/j.orgel.2010.09.023",

language = "English",

volume = "12",

pages = "78--82",

journal = "Organic Electronics",

issn = "1566-1199",

publisher = "Elsevier BV",

number = "1",

}

TY - JOUR

T1 - High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

AU - Chao, Yu Chiang

AU - Niu, Mu Chun

AU - Zan, Hsiao Wen

AU - Meng, Hsin Fei

AU - Ku, Ming Che

N1 - Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC98-2628-M-009-001.

PY - 2011/1

Y1 - 2011/1

N2 - The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

AB - The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10-5 cm2/Vs to 10-3 cm 2/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm2 while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array.

KW - Space-charge-limited current

KW - Vertical transistor

UR - https://www.scopus.com/pages/publications/78249245435

UR - https://www.scopus.com/pages/publications/78249245435#tab=citedBy

U2 - 10.1016/j.orgel.2010.09.023

DO - 10.1016/j.orgel.2010.09.023

M3 - Article

AN - SCOPUS:78249245435

SN - 1566-1199

VL - 12

SP - 78

EP - 82

JO - Organic Electronics

JF - Organic Electronics

IS - 1

ER -

High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this