TY - GEN
T1 - High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer
AU - Hsu, H. H.
AU - Chiou, P.
AU - Chiu, Y. C.
AU - Yen, S. S.
AU - Chang, C. Y.
AU - Cheng, C. H.
PY - 2014
Y1 - 2014
N2 - Metal-oxide InGaZnO thin-film transistors (IGZO TFTs) have received substantial attention as potential substitutes for amorphous Si and/or polycrystalline Si in active-matrix liquid-crystal displays, active-matrix organic light emitted diodes (AMOLEDs), and three-dimensional (3D) display applications [1]-[2]. It is well known that the multi-alloy IGZO channel plays an important role in device characteristics such as subthreshold swing (SS) and field-effect mobility (μFE). Although the high-K gate dielectrics to lower operating voltage and threshold voltage (VT) of TFT devices have demonstrated [3]-[5], these critical issues on transfer characteristics still need to be overcome. The large SS and low μFE prevent them from being applied in fast-switching and high-resolution displays. In this paper, we demonstrate high mobility IGZO TFT with titanium oxide (TiO x) channel capping layer. Large μfe of 66 cm 2/Vs and low SS of 79 mV/dec were achieved using narrow-bandgap TiOx (Eg∼ 3.1eV) [6] with optimized 5-nm thickness. The similar bandgap and conduction band offset to those of IGZO are favorable to obtain a low resistance ohmic contact between amorphous IGZO and Al contact metals.
AB - Metal-oxide InGaZnO thin-film transistors (IGZO TFTs) have received substantial attention as potential substitutes for amorphous Si and/or polycrystalline Si in active-matrix liquid-crystal displays, active-matrix organic light emitted diodes (AMOLEDs), and three-dimensional (3D) display applications [1]-[2]. It is well known that the multi-alloy IGZO channel plays an important role in device characteristics such as subthreshold swing (SS) and field-effect mobility (μFE). Although the high-K gate dielectrics to lower operating voltage and threshold voltage (VT) of TFT devices have demonstrated [3]-[5], these critical issues on transfer characteristics still need to be overcome. The large SS and low μFE prevent them from being applied in fast-switching and high-resolution displays. In this paper, we demonstrate high mobility IGZO TFT with titanium oxide (TiO x) channel capping layer. Large μfe of 66 cm 2/Vs and low SS of 79 mV/dec were achieved using narrow-bandgap TiOx (Eg∼ 3.1eV) [6] with optimized 5-nm thickness. The similar bandgap and conduction band offset to those of IGZO are favorable to obtain a low resistance ohmic contact between amorphous IGZO and Al contact metals.
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U2 - 10.1109/DRC.2014.6872320
DO - 10.1109/DRC.2014.6872320
M3 - Conference contribution
AN - SCOPUS:84906538734
SN - 9781479954056
T3 - Device Research Conference - Conference Digest, DRC
SP - 107
EP - 108
BT - 72nd Device Research Conference, DRC 2014 - Conference Digest
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 72nd Device Research Conference, DRC 2014
Y2 - 22 June 2014 through 25 June 2014
ER -