High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer

H. H. Hsu, P. Chiou, Y. C. Chiu, S. S. Yen, C. Y. Chang, Chun-Hu Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-oxide InGaZnO thin-film transistors (IGZO TFTs) have received substantial attention as potential substitutes for amorphous Si and/or polycrystalline Si in active-matrix liquid-crystal displays, active-matrix organic light emitted diodes (AMOLEDs), and three-dimensional (3D) display applications [1]-[2]. It is well known that the multi-alloy IGZO channel plays an important role in device characteristics such as subthreshold swing (SS) and field-effect mobility (μFE). Although the high-K gate dielectrics to lower operating voltage and threshold voltage (VT) of TFT devices have demonstrated [3]-[5], these critical issues on transfer characteristics still need to be overcome. The large SS and low μFE prevent them from being applied in fast-switching and high-resolution displays. In this paper, we demonstrate high mobility IGZO TFT with titanium oxide (TiO x) channel capping layer. Large μfe of 66 cm 2/Vs and low SS of 79 mV/dec were achieved using narrow-bandgap TiOx (Eg∼ 3.1eV) [6] with optimized 5-nm thickness. The similar bandgap and conduction band offset to those of IGZO are favorable to obtain a low resistance ohmic contact between amorphous IGZO and Al contact metals.

Original languageEnglish
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages107-108
Number of pages2
ISBN (Print)9781479954056
DOIs
Publication statusPublished - 2014 Jan 1
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: 2014 Jun 222014 Jun 25

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period14/6/2214/6/25

Fingerprint

Titanium oxides
Thin film transistors
Energy gap
Display devices
Ohmic contacts
Gate dielectrics
Conduction bands
Metals
Liquid crystal displays
Threshold voltage
Oxide films
Diodes
Electric potential
Oxide semiconductors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Hsu, H. H., Chiou, P., Chiu, Y. C., Yen, S. S., Chang, C. Y., & Cheng, C-H. (2014). High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 107-108). [6872320] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872320

High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer. / Hsu, H. H.; Chiou, P.; Chiu, Y. C.; Yen, S. S.; Chang, C. Y.; Cheng, Chun-Hu.

72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 107-108 6872320 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hsu, HH, Chiou, P, Chiu, YC, Yen, SS, Chang, CY & Cheng, C-H 2014, High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer. in 72nd Device Research Conference, DRC 2014 - Conference Digest., 6872320, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 107-108, 72nd Device Research Conference, DRC 2014, Santa Barbara, CA, United States, 14/6/22. https://doi.org/10.1109/DRC.2014.6872320
Hsu HH, Chiou P, Chiu YC, Yen SS, Chang CY, Cheng C-H. High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer. In 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc. 2014. p. 107-108. 6872320. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2014.6872320
Hsu, H. H. ; Chiou, P. ; Chiu, Y. C. ; Yen, S. S. ; Chang, C. Y. ; Cheng, Chun-Hu. / High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer. 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 107-108 (Device Research Conference - Conference Digest, DRC).
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