High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer

H. H. Hsu, P. Chiou, Y. C. Chiu, S. S. Yen, C. Y. Chang, Chun-Hu Cheng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Metal-oxide InGaZnO thin-film transistors (IGZO TFTs) have received substantial attention as potential substitutes for amorphous Si and/or polycrystalline Si in active-matrix liquid-crystal displays, active-matrix organic light emitted diodes (AMOLEDs), and three-dimensional (3D) display applications [1]-[2]. It is well known that the multi-alloy IGZO channel plays an important role in device characteristics such as subthreshold swing (SS) and field-effect mobility (μFE). Although the high-K gate dielectrics to lower operating voltage and threshold voltage (VT) of TFT devices have demonstrated [3]-[5], these critical issues on transfer characteristics still need to be overcome. The large SS and low μFE prevent them from being applied in fast-switching and high-resolution displays. In this paper, we demonstrate high mobility IGZO TFT with titanium oxide (TiO x) channel capping layer. Large μfe of 66 cm 2/Vs and low SS of 79 mV/dec were achieved using narrow-bandgap TiOx (Eg∼ 3.1eV) [6] with optimized 5-nm thickness. The similar bandgap and conduction band offset to those of IGZO are favorable to obtain a low resistance ohmic contact between amorphous IGZO and Al contact metals.

Original languageEnglish
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages107-108
Number of pages2
ISBN (Print)9781479954056
DOIs
Publication statusPublished - 2014 Jan 1
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: 2014 Jun 222014 Jun 25

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period14/6/2214/6/25

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Hsu, H. H., Chiou, P., Chiu, Y. C., Yen, S. S., Chang, C. Y., & Cheng, C-H. (2014). High mobility InGaZnO thin film transistor using narrow-bandgap titanium-oxide semiconductor as channel capping layer. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 107-108). [6872320] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872320