High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics

Hsiao Hsuan Hsu*, Chun Yen Chang, Chun Hu Cheng, Po Chun Chen, Yu Chien Chiu, Ping Chiou, Chin Pao Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

Original languageEnglish
Article number6837417
Pages (from-to)847-853
Number of pages7
JournalIEEE/OSA Journal of Display Technology
Issue number10
Publication statusPublished - 2014 Oct 1


  • Flexible
  • indium-gallium-zinc oxide (IGZO)
  • room temperature
  • thin-film transistor (TFT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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