Abstract
This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.
Original language | English |
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Article number | 6837417 |
Pages (from-to) | 847-853 |
Number of pages | 7 |
Journal | IEEE/OSA Journal of Display Technology |
Volume | 10 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2014 Oct 1 |
Keywords
- Flexible
- indium-gallium-zinc oxide (IGZO)
- room temperature
- thin-film transistor (TFT)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering