High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng; Po Chun Chen; Yu Chien Chiu; Ping Chiou; Chin Pao Cheng

doi:10.1109/JDT.2014.2331351

High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics

Hsiao Hsuan Hsu^*, Chun Yen Chang, Chun Hu Cheng, Po Chun Chen, Yu Chien Chiu, Ping Chiou, Chin Pao Cheng

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO₂ and Y₂O₃ exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO₂ film. Based on the experimental results, the room-temperature IGZO/HfO₂ TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm² Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

Original language	English
Article number	6837417
Pages (from-to)	847-853
Number of pages	7
Journal	IEEE/OSA Journal of Display Technology
Volume	10
Issue number	10
DOIs	https://doi.org/10.1109/JDT.2014.2331351
Publication status	Published - 2014 Oct 1

Keywords

Flexible
indium-gallium-zinc oxide (IGZO)
room temperature
thin-film transistor (TFT)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JDT.2014.2331351

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title = "High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics",

abstract = "This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.",

keywords = "Flexible, indium-gallium-zinc oxide (IGZO), room temperature, thin-film transistor (TFT)",

author = "Hsu, {Hsiao Hsuan} and Chang, {Chun Yen} and Cheng, {Chun Hu} and Chen, {Po Chun} and Chiu, {Yu Chien} and Ping Chiou and Cheng, {Chin Pao}",

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AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

AU - Cheng, Chun Hu

AU - Chen, Po Chun

AU - Chiu, Yu Chien

AU - Chiou, Ping

AU - Cheng, Chin Pao

PY - 2014/10/1

Y1 - 2014/10/1

N2 - This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

AB - This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

KW - Flexible

KW - indium-gallium-zinc oxide (IGZO)

KW - room temperature

KW - thin-film transistor (TFT)

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High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics

Abstract

Keywords

ASJC Scopus subject areas

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