High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics

Hsiao Hsuan Hsu, Chun Yen Chang, Chun-Hu Cheng, Po Chun Chen, Yu Chien Chiu, Ping Chiou, Chin-Pao Cheng

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This paper reports an InGaZnO thin-film transistor (TFT) that involves using fully room-temperature gate dielectrics on a flexible substrate. The wide bandgap dielectrics of HfO2 and Y2O3 exhibited favorable adhesion properties on a flexible substrate compared with conventional low-κ SiO2 film. Based on the experimental results, the room-temperature IGZO/HfO2 TFTs demonstrated effective device integrity, and achieve a low drive voltage of < 2 V, a low threshold voltage of 0.46 ± 006V, a low sub-threshold swing of 110 ± 6mV/decade and an extremely high mobility of 60.2 ±32cm2 Vhboxs. The excellent performance of this TFT indicated that it demonstrates considerable potential for active-matrix liquid crystal display applications requiring low power consumption and a high driving current.

Original languageEnglish
Article number6837417
Pages (from-to)847-853
Number of pages7
JournalIEEE/OSA Journal of Display Technology
Volume10
Issue number10
DOIs
Publication statusPublished - 2014 Oct 1

Fingerprint

Gate dielectrics
Thin film transistors
Field effect transistors
transistors
room temperature
Substrates
thin films
Liquid crystal displays
Threshold voltage
threshold voltage
integrity
low voltage
high current
Energy gap
adhesion
Electric power utilization
Adhesion
liquid crystals
Temperature
thresholds

Keywords

  • Flexible
  • indium-gallium-zinc oxide (IGZO)
  • room temperature
  • thin-film transistor (TFT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics. / Hsu, Hsiao Hsuan; Chang, Chun Yen; Cheng, Chun-Hu; Chen, Po Chun; Chiu, Yu Chien; Chiou, Ping; Cheng, Chin-Pao.

In: IEEE/OSA Journal of Display Technology, Vol. 10, No. 10, 6837417, 01.10.2014, p. 847-853.

Research output: Contribution to journalArticle

Hsu, Hsiao Hsuan ; Chang, Chun Yen ; Cheng, Chun-Hu ; Chen, Po Chun ; Chiu, Yu Chien ; Chiou, Ping ; Cheng, Chin-Pao. / High mobility field-effect thin film transistor using room-temperature high-κ gate dielectrics. In: IEEE/OSA Journal of Display Technology. 2014 ; Vol. 10, No. 10. pp. 847-853.
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