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High mobility bilayer metal-oxide thin film transistors using titanium-doped InGaZnO
Hsiao Hsuan Hsu
, Chun Yen Chang
,
Chun Hu Cheng
, Shan Haw Chiou
, Chiung Hui Huang
Department of Mechatronic Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
60
Citations (Scopus)
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INIS
layers
100%
mobility
100%
gallium
100%
doped materials
100%
oxides
100%
transistors
100%
metals
100%
thin films
100%
zinc oxides
100%
titanium
100%
indium
100%
performance
25%
comparative evaluations
25%
resolution
25%
applications
25%
voltage
25%
thickness
25%
modulation
25%
Material Science
Thin-Film Transistor
100%
Indium
100%
Metal Oxide
100%
Zinc Oxide
100%
Gallium
100%
Titanium
100%
Chemical Engineering
Indium
100%
Film
100%
Zinc Oxide
100%
Engineering
Thin film transistors
100%
Oxide Thickness
50%
Drive Voltage
50%
Potential Application
50%
High Resolution
50%