High mobility bilayer metal-oxide thin film transistors using titanium-doped InGaZnO

Hsiao Hsuan Hsu; Chun Yen Chang; Chun Hu Cheng; Shan Haw Chiou; Chiung Hui Huang

doi:10.1109/LED.2013.2290707

High mobility bilayer metal-oxide thin film transistors using titanium-doped InGaZnO

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shan Haw Chiou, Chiung Hui Huang

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of < 2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 × 10^?11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm₂/Vs, which may create the potential application for high resolution display.

Original language	English
Article number	6679240
Pages (from-to)	87-89
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	1
DOIs	https://doi.org/10.1109/LED.2013.2290707
Publication status	Published - 2014 Jan

Keywords

TiO
gettering
indium-gallium-zinc oxide (IGZO)
mobility
thin-film transistor (TFT)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2013.2290707

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abstract = "We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of < 2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 × 10?11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm2/Vs, which may create the potential application for high resolution display.",

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AU - Hsu, Hsiao Hsuan

AU - Chang, Chun Yen

AU - Cheng, Chun Hu

AU - Chiou, Shan Haw

AU - Huang, Chiung Hui

PY - 2014/1

Y1 - 2014/1

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AB - We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of < 2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 × 10?11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm2/Vs, which may create the potential application for high resolution display.

KW - TiO

KW - gettering

KW - indium-gallium-zinc oxide (IGZO)

KW - mobility

KW - thin-film transistor (TFT)

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High mobility bilayer metal-oxide thin film transistors using titanium-doped InGaZnO

Abstract

Keywords

ASJC Scopus subject areas

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