High mobility bilayer metal-oxide thin film transistors using titanium-doped InGaZnO

Hsiao Hsuan Hsu, Chun Yen Chang, Chun Hu Cheng, Shan Haw Chiou, Chiung Hui Huang

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

We report a high performance indium-gallium-zinc oxide (IGZO)/IGZO:Ti bilayer metal-oxide thin-film transistor (TFT) with a low drive voltage of < 2 V. Compared with conventional IGZO TFTs, the novel bilayer metal-oxide TFTs through IGZO thickness modulation can reach the lowest off current of 1.6 × 10?11 A, smallest sub-threshold swing of 73 mV/decade, and highest mobility of 63 cm2/Vs, which may create the potential application for high resolution display.

Original languageEnglish
Article number6679240
Pages (from-to)87-89
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

Keywords

  • TiO
  • gettering
  • indium-gallium-zinc oxide (IGZO)
  • mobility
  • thin-film transistor (TFT)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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