High light-extraction GaN-based vertical LEDs with double diffuse surfaces

Y. J. Lee; H. C. Kuo; T. C. Lu; S. C. Wang

doi:10.1109/CLEO.2007.4453006

High light-extraction GaN-based vertical LEDs with double diffuse surfaces

Y. J. Lee^*, H. C. Kuo, T. C. Lu, S. C. Wang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

High light-extraction (external quantum efficiency ∼40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.

Original language	English
Title of host publication	Conference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs	https://doi.org/10.1109/CLEO.2007.4453006
Publication status	Published - 2007
Externally published	Yes
Event	Conference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States Duration: 2007 May 6 → 2007 May 11

Publication series

Name	Conference on Lasers and Electro-Optics, 2007, CLEO 2007

Other

Other	Conference on Lasers and Electro-Optics, 2007, CLEO 2007
Country/Territory	United States
City	Baltimore, MD
Period	2007/05/06 → 2007/05/11

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1109/CLEO.2007.4453006

Cite this

Lee, YJ, Kuo, HC, Lu, TC & Wang, SC 2007, High light-extraction GaN-based vertical LEDs with double diffuse surfaces. in Conference on Lasers and Electro-Optics, 2007, CLEO 2007., 4453006, Conference on Lasers and Electro-Optics, 2007, CLEO 2007, Conference on Lasers and Electro-Optics, 2007, CLEO 2007, Baltimore, MD, United States, 2007/05/06. https://doi.org/10.1109/CLEO.2007.4453006

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title = "High light-extraction GaN-based vertical LEDs with double diffuse surfaces",

abstract = "High light-extraction (external quantum efficiency ∼40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.",

author = "Lee, {Y. J.} and Kuo, {H. C.} and Lu, {T. C.} and Wang, {S. C.}",

year = "2007",

doi = "10.1109/CLEO.2007.4453006",

language = "English",

isbn = "9781557528346",

series = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007",

booktitle = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007",

note = "Conference on Lasers and Electro-Optics, 2007, CLEO 2007 ; Conference date: 06-05-2007 Through 11-05-2007",

}

TY - GEN

T1 - High light-extraction GaN-based vertical LEDs with double diffuse surfaces

AU - Lee, Y. J.

AU - Kuo, H. C.

AU - Lu, T. C.

AU - Wang, S. C.

PY - 2007

Y1 - 2007

N2 - High light-extraction (external quantum efficiency ∼40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.

AB - High light-extraction (external quantum efficiency ∼40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.

UR - http://www.scopus.com/inward/record.url?scp=82955174732&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82955174732&partnerID=8YFLogxK

U2 - 10.1109/CLEO.2007.4453006

DO - 10.1109/CLEO.2007.4453006

M3 - Conference contribution

AN - SCOPUS:82955174732

SN - 9781557528346

T3 - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

BT - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

T2 - Conference on Lasers and Electro-Optics, 2007, CLEO 2007

Y2 - 6 May 2007 through 11 May 2007

ER -

High light-extraction GaN-based vertical LEDs with double diffuse surfaces

Abstract

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ASJC Scopus subject areas

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