High light-extraction GaN-based vertical LEDs with double diffuse surfaces

Ya-Ju Lee, H. C. Kuo, T. C. Lu, S. C. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High light-extraction (external quantum efficiency ~40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2007
PublisherOptical Society of America
ISBN (Print)1557528349, 9781557528346
Publication statusPublished - 2007 Jan 1
EventConference on Lasers and Electro-Optics, CLEO 2007 - Baltimore, MD, United States
Duration: 2007 May 62007 May 6

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period07/5/607/5/6

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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