High light-extraction GaN-based vertical LEDs with double diffuse surfaces

Ya-Ju Lee, H. C. Kuo, T. C. Lu, S. C. Wang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    High light-extraction (external quantum efficiency ~40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.

    Original languageEnglish
    Title of host publicationConference on Lasers and Electro-Optics, CLEO 2007
    PublisherOptical Society of America
    ISBN (Print)1557528349, 9781557528346
    Publication statusPublished - 2007 Jan 1
    EventConference on Lasers and Electro-Optics, CLEO 2007 - Baltimore, MD, United States
    Duration: 2007 May 62007 May 6

    Publication series

    NameOptics InfoBase Conference Papers
    ISSN (Electronic)2162-2701

    Other

    OtherConference on Lasers and Electro-Optics, CLEO 2007
    CountryUnited States
    CityBaltimore, MD
    Period2007/05/062007/05/06

    ASJC Scopus subject areas

    • Instrumentation
    • Atomic and Molecular Physics, and Optics

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