High light-extraction GaN-based vertical LEDs with double diffuse surfaces

Y. J. Lee, H. C. Kuo, T. C. Lu, S. C. Wang

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    High light-extraction (external quantum efficiency ∼40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.

    Original languageEnglish
    Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
    DOIs
    Publication statusPublished - 2007 Dec 1
    EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States
    Duration: 2007 May 62007 May 11

    Publication series

    NameConference on Lasers and Electro-Optics, 2007, CLEO 2007

    Other

    OtherConference on Lasers and Electro-Optics, 2007, CLEO 2007
    CountryUnited States
    CityBaltimore, MD
    Period07/5/607/5/11

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials

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