High light-extraction GaN-based vertical LEDs with double diffuse surfaces

Y. J. Lee, H. C. Kuo, T. C. Lu, S. C. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High light-extraction (external quantum efficiency ∼40%) 465-nm GaN-based vertical light-emitting diodes (LEDs) employing double diffuse surfaces were fabricated. The high scattering efficiency of double diffused surfaces could be responsible for the high light output power.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics, 2007, CLEO 2007
DOIs
Publication statusPublished - 2007 Dec 1
EventConference on Lasers and Electro-Optics, 2007, CLEO 2007 - Baltimore, MD, United States
Duration: 2007 May 62007 May 11

Publication series

NameConference on Lasers and Electro-Optics, 2007, CLEO 2007

Other

OtherConference on Lasers and Electro-Optics, 2007, CLEO 2007
CountryUnited States
CityBaltimore, MD
Period07/5/607/5/11

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lee, Y. J., Kuo, H. C., Lu, T. C., & Wang, S. C. (2007). High light-extraction GaN-based vertical LEDs with double diffuse surfaces. In Conference on Lasers and Electro-Optics, 2007, CLEO 2007 [4453006] (Conference on Lasers and Electro-Optics, 2007, CLEO 2007). https://doi.org/10.1109/CLEO.2007.4453006