High internal differential efficiency mid-infrared quantum cascade lasers

  • Dan Botez
  • , Jeremy D. Kirch
  • , Chun Chieh Chang
  • , Colin Boyle
  • , Honghyuk Kim
  • , Kevin M. Oresick
  • , Chris Sigler
  • , Luke J. Mawst
  • , Minhyeok Jo
  • , Jae Cheol Shin
  • , Doo Gun-Kim
  • , Don F. Lindberg
  • , Thomas L. Earles

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Implementation of the step-taper active-region (STA) design to 8-9 μm-emitting quantum cascade lasers (QCLs) has resulted in both high T0 and T1 values: 220 K and 665 K, and short lower-level lifetimes: 0.12 ps. In turn, the internal differential efficiency ηid, which is the product of the injection efficiency and the differential laser-transition efficiency, reaches values as high as 86 % for both 8.4 μm- and 8.8 μm-emitting QCLs. Such ηid values are 30-50% higher than those obtained from conventional QCLs emitting in the 7-11 μm wavelength range. Achieving both carrier-leakage suppression and miniband-like carrier extraction in mid-infrared (IR) QCLs leads to ηid values close to the fundamental limit of ∼ 90 %. In turn, the currently employed fundamental wallplug-efficiency limits over the mid-IR wavelength range have to be increased by ∼ 34 % (e.g., the wallplug-efficiency limit at λ= 4.6 μm increases from 29 % to 39 %). Preliminary results from STA-type 4.8-5.0 μm-emitting QCLs include 1.5 W CW operation, and 77 % internal differential efficiency; that is, 30-50% higher than the ηid values obtained from conventional 4.0-6.5μm-emitting QCLs.

Original languageEnglish
Title of host publicationNovel In-Plane Semiconductor Lasers XVI
EditorsPeter M. Smowton, Alexey A. Belyanin
PublisherSPIE
ISBN (Electronic)9781510606876
DOIs
Publication statusPublished - 2017
Externally publishedYes
EventNovel In-Plane Semiconductor Lasers XVI 2017 - San Francisco, United States
Duration: 2017 Jan 302017 Feb 2

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10123
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceNovel In-Plane Semiconductor Lasers XVI 2017
Country/TerritoryUnited States
CitySan Francisco
Period2017/01/302017/02/02

Keywords

  • Carrier-leakage suppression
  • Internal differential efficiency
  • Quantum cascade laser
  • Resonant-tunneling carrier extraction
  • Temperature sensitivity
  • Wallplug efficiency

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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