High internal differential efficiency mid-infrared quantum cascade lasers

Dan Botez; Jeremy D. Kirch; Chun Chieh Chang; Colin Boyle; Honghyuk Kim; Kevin M. Oresick; Chris Sigler; Luke J. Mawst; Minhyeok Jo; Jae Cheol Shin; Doo Gun-Kim; Don F. Lindberg; Thomas L. Earles

doi:10.1117/12.2249537

High internal differential efficiency mid-infrared quantum cascade lasers

Dan Botez, Jeremy D. Kirch, Chun Chieh Chang, Colin Boyle, Honghyuk Kim, Kevin M. Oresick, Chris Sigler, Luke J. Mawst, Minhyeok Jo, Jae Cheol Shin, Doo Gun-Kim, Don F. Lindberg, Thomas L. Earles

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

Implementation of the step-taper active-region (STA) design to 8-9 μm-emitting quantum cascade lasers (QCLs) has resulted in both high T₀ and T₁ values: 220 K and 665 K, and short lower-level lifetimes: 0.12 ps. In turn, the internal differential efficiency η_id, which is the product of the injection efficiency and the differential laser-transition efficiency, reaches values as high as 86 % for both 8.4 μm- and 8.8 μm-emitting QCLs. Such η_id values are 30-50% higher than those obtained from conventional QCLs emitting in the 7-11 μm wavelength range. Achieving both carrier-leakage suppression and miniband-like carrier extraction in mid-infrared (IR) QCLs leads to η_id values close to the fundamental limit of ∼ 90 %. In turn, the currently employed fundamental wallplug-efficiency limits over the mid-IR wavelength range have to be increased by ∼ 34 % (e.g., the wallplug-efficiency limit at λ= 4.6 μm increases from 29 % to 39 %). Preliminary results from STA-type 4.8-5.0 μm-emitting QCLs include 1.5 W CW operation, and 77 % internal differential efficiency; that is, 30-50% higher than the η_id values obtained from conventional 4.0-6.5μm-emitting QCLs.

Original language	English
Title of host publication	Novel In-Plane Semiconductor Lasers XVI
Editors	Peter M. Smowton, Alexey A. Belyanin
Publisher	SPIE
ISBN (Electronic)	9781510606876
DOIs	https://doi.org/10.1117/12.2249537
Publication status	Published - 2017
Externally published	Yes
Event	Novel In-Plane Semiconductor Lasers XVI 2017 - San Francisco, United States Duration: 2017 Jan 30 → 2017 Feb 2

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10123
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Novel In-Plane Semiconductor Lasers XVI 2017
Country/Territory	United States
City	San Francisco
Period	2017/01/30 → 2017/02/02

Keywords

Carrier-leakage suppression
Internal differential efficiency
Quantum cascade laser
Resonant-tunneling carrier extraction
Temperature sensitivity
Wallplug efficiency

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2249537

Cite this

Botez, D., Kirch, J. D., Chang, C. C., Boyle, C., Kim, H., Oresick, K. M., Sigler, C., Mawst, L. J., Jo, M., Shin, J. C., Gun-Kim, D., Lindberg, D. F., & Earles, T. L. (2017). High internal differential efficiency mid-infrared quantum cascade lasers. In P. M. Smowton, & A. A. Belyanin (Eds.), Novel In-Plane Semiconductor Lasers XVI Article 101230Q (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10123). SPIE. https://doi.org/10.1117/12.2249537

High internal differential efficiency mid-infrared quantum cascade lasers. / Botez, Dan; Kirch, Jeremy D.; Chang, Chun Chieh et al.
Novel In-Plane Semiconductor Lasers XVI. ed. / Peter M. Smowton; Alexey A. Belyanin. SPIE, 2017. 101230Q (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10123).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Botez, D, Kirch, JD, Chang, CC, Boyle, C, Kim, H, Oresick, KM, Sigler, C, Mawst, LJ, Jo, M, Shin, JC, Gun-Kim, D, Lindberg, DF & Earles, TL 2017, High internal differential efficiency mid-infrared quantum cascade lasers. in PM Smowton & AA Belyanin (eds), Novel In-Plane Semiconductor Lasers XVI., 101230Q, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10123, SPIE, Novel In-Plane Semiconductor Lasers XVI 2017, San Francisco, United States, 2017/01/30. https://doi.org/10.1117/12.2249537

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title = "High internal differential efficiency mid-infrared quantum cascade lasers",

abstract = "Implementation of the step-taper active-region (STA) design to 8-9 μm-emitting quantum cascade lasers (QCLs) has resulted in both high T0 and T1 values: 220 K and 665 K, and short lower-level lifetimes: 0.12 ps. In turn, the internal differential efficiency ηid, which is the product of the injection efficiency and the differential laser-transition efficiency, reaches values as high as 86 % for both 8.4 μm- and 8.8 μm-emitting QCLs. Such ηid values are 30-50% higher than those obtained from conventional QCLs emitting in the 7-11 μm wavelength range. Achieving both carrier-leakage suppression and miniband-like carrier extraction in mid-infrared (IR) QCLs leads to ηid values close to the fundamental limit of ∼ 90 %. In turn, the currently employed fundamental wallplug-efficiency limits over the mid-IR wavelength range have to be increased by ∼ 34 % (e.g., the wallplug-efficiency limit at λ= 4.6 μm increases from 29 % to 39 %). Preliminary results from STA-type 4.8-5.0 μm-emitting QCLs include 1.5 W CW operation, and 77 % internal differential efficiency; that is, 30-50% higher than the ηid values obtained from conventional 4.0-6.5μm-emitting QCLs.",

keywords = "Carrier-leakage suppression, Internal differential efficiency, Quantum cascade laser, Resonant-tunneling carrier extraction, Temperature sensitivity, Wallplug efficiency",

author = "Dan Botez and Kirch, {Jeremy D.} and Chang, {Chun Chieh} and Colin Boyle and Honghyuk Kim and Oresick, {Kevin M.} and Chris Sigler and Mawst, {Luke J.} and Minhyeok Jo and Shin, {Jae Cheol} and Doo Gun-Kim and Lindberg, {Don F.} and Earles, {Thomas L.}",

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year = "2017",

doi = "10.1117/12.2249537",

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AU - Botez, Dan

AU - Kirch, Jeremy D.

AU - Chang, Chun Chieh

AU - Boyle, Colin

AU - Kim, Honghyuk

AU - Oresick, Kevin M.

AU - Sigler, Chris

AU - Mawst, Luke J.

AU - Jo, Minhyeok

AU - Shin, Jae Cheol

AU - Gun-Kim, Doo

AU - Lindberg, Don F.

AU - Earles, Thomas L.

PY - 2017

Y1 - 2017

N2 - Implementation of the step-taper active-region (STA) design to 8-9 μm-emitting quantum cascade lasers (QCLs) has resulted in both high T0 and T1 values: 220 K and 665 K, and short lower-level lifetimes: 0.12 ps. In turn, the internal differential efficiency ηid, which is the product of the injection efficiency and the differential laser-transition efficiency, reaches values as high as 86 % for both 8.4 μm- and 8.8 μm-emitting QCLs. Such ηid values are 30-50% higher than those obtained from conventional QCLs emitting in the 7-11 μm wavelength range. Achieving both carrier-leakage suppression and miniband-like carrier extraction in mid-infrared (IR) QCLs leads to ηid values close to the fundamental limit of ∼ 90 %. In turn, the currently employed fundamental wallplug-efficiency limits over the mid-IR wavelength range have to be increased by ∼ 34 % (e.g., the wallplug-efficiency limit at λ= 4.6 μm increases from 29 % to 39 %). Preliminary results from STA-type 4.8-5.0 μm-emitting QCLs include 1.5 W CW operation, and 77 % internal differential efficiency; that is, 30-50% higher than the ηid values obtained from conventional 4.0-6.5μm-emitting QCLs.

AB - Implementation of the step-taper active-region (STA) design to 8-9 μm-emitting quantum cascade lasers (QCLs) has resulted in both high T0 and T1 values: 220 K and 665 K, and short lower-level lifetimes: 0.12 ps. In turn, the internal differential efficiency ηid, which is the product of the injection efficiency and the differential laser-transition efficiency, reaches values as high as 86 % for both 8.4 μm- and 8.8 μm-emitting QCLs. Such ηid values are 30-50% higher than those obtained from conventional QCLs emitting in the 7-11 μm wavelength range. Achieving both carrier-leakage suppression and miniband-like carrier extraction in mid-infrared (IR) QCLs leads to ηid values close to the fundamental limit of ∼ 90 %. In turn, the currently employed fundamental wallplug-efficiency limits over the mid-IR wavelength range have to be increased by ∼ 34 % (e.g., the wallplug-efficiency limit at λ= 4.6 μm increases from 29 % to 39 %). Preliminary results from STA-type 4.8-5.0 μm-emitting QCLs include 1.5 W CW operation, and 77 % internal differential efficiency; that is, 30-50% higher than the ηid values obtained from conventional 4.0-6.5μm-emitting QCLs.

KW - Carrier-leakage suppression

KW - Internal differential efficiency

KW - Quantum cascade laser

KW - Resonant-tunneling carrier extraction

KW - Temperature sensitivity

KW - Wallplug efficiency

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BT - Novel In-Plane Semiconductor Lasers XVI

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A2 - Belyanin, Alexey A.

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Y2 - 30 January 2017 through 2 February 2017

ER -

High internal differential efficiency mid-infrared quantum cascade lasers

Abstract

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Conference

Keywords

ASJC Scopus subject areas

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