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High ge content of SiGe channel pMOSFETs on Si (110) surfaces
M. H. Lee
, S. T. Chang
, S. Maikap
, C. Y. Peng
, C. H. Lee
Undergraduate Program of Electro-Optical Engineering
Research output
:
Contribution to journal
›
Article
›
peer-review
16
Citations (Scopus)
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INIS
surfaces
100%
germanium silicides
100%
comparative evaluations
66%
hole mobility
66%
performance
33%
saturation
33%
mobility
33%
Material Science
Surface (Surface Science)
100%
Hole Mobility
100%
Engineering
Current Drain
100%
Mobility Enhancement
100%
Chemistry
Hole Mobility
100%