High ge content of SiGe channel pMOSFETs on Si (110) surfaces

M. H. Lee; S. T. Chang; S. Maikap; C. Y. Peng; C. H. Lee

doi:10.1109/LED.2009.2036138

High ge content of SiGe channel pMOSFETs on Si (110) surfaces

M. H. Lee
, S. T. Chang
, S. Maikap
, C. Y. Peng
, C. H. Lee

Institute and Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. ₂Ge0. ₈(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

Original language	English
Article number	5371936
Pages (from-to)	141-143
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	2
DOIs	https://doi.org/10.1109/LED.2009.2036138
Publication status	Published - 2010 Feb

Keywords

(110)
Mobility
Orientation
SiGe
Strain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2036138

Cite this

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title = "High ge content of SiGe channel pMOSFETs on Si (110) surfaces",

abstract = "The characteristics of \$\textbackslash{}hbox\{Si\}-\{0.2\}\textbackslash{}hbox\{Ge\}-\{0.8\}\$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70\% and by 80\% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200\% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.",

keywords = "(110), Mobility, Orientation, SiGe, Strain",

author = "Lee, \{M. H.\} and Chang, \{S. T.\} and S. Maikap and Peng, \{C. Y.\} and Lee, \{C. H.\}",

note = "Funding Information: Manuscript received October 26, 2009; revised October 28, 2009. First published December 31, 2009; current version published January 27, 2010. This work was supported in part by the National Science Council under Grants 98-2221-E-003-020-MY3 and 97-2622-E-003-003-CC1, by the National Nano Device Laboratories, and by the Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Taiwan. The review of this letter was arranged by Editor S. Kawamura.",

year = "2010",

month = feb,

doi = "10.1109/LED.2009.2036138",

language = "English",

volume = "31",

pages = "141--143",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

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AU - Lee, M. H.

AU - Chang, S. T.

AU - Maikap, S.

AU - Peng, C. Y.

AU - Lee, C. H.

N1 - Funding Information: Manuscript received October 26, 2009; revised October 28, 2009. First published December 31, 2009; current version published January 27, 2010. This work was supported in part by the National Science Council under Grants 98-2221-E-003-020-MY3 and 97-2622-E-003-003-CC1, by the National Nano Device Laboratories, and by the Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Taiwan. The review of this letter was arranged by Editor S. Kawamura.

PY - 2010/2

Y1 - 2010/2

N2 - The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

AB - The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

KW - (110)

KW - Mobility

KW - Orientation

KW - SiGe

KW - Strain

UR - https://www.scopus.com/pages/publications/75749084333

UR - https://www.scopus.com/pages/publications/75749084333#tab=citedBy

U2 - 10.1109/LED.2009.2036138

DO - 10.1109/LED.2009.2036138

M3 - Article

AN - SCOPUS:75749084333

SN - 0741-3106

VL - 31

SP - 141

EP - 143

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 5371936

ER -

High ge content of SiGe channel pMOSFETs on Si (110) surfaces

Abstract

Keywords

ASJC Scopus subject areas

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