High ge content of SiGe channel pMOSFETs on Si (110) surfaces

M. H. Lee; S. T. Chang; S. Maikap; C. Y. Peng; C. H. Lee

doi:10.1109/LED.2009.2036138

High ge content of SiGe channel pMOSFETs on Si (110) surfaces

M. H. Lee, S. T. Chang, S. Maikap, C. Y. Peng, C. H. Lee

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. ₂Ge0. ₈(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

Original language	English
Article number	5371936
Pages (from-to)	141-143
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	2
DOIs	https://doi.org/10.1109/LED.2009.2036138
Publication status	Published - 2010 Feb

Keywords

(110)
Mobility
Orientation
SiGe
Strain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2009.2036138

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title = "High ge content of SiGe channel pMOSFETs on Si (110) surfaces",

abstract = "The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.",

keywords = "(110), Mobility, Orientation, SiGe, Strain",

author = "Lee, {M. H.} and Chang, {S. T.} and S. Maikap and Peng, {C. Y.} and Lee, {C. H.}",

note = "Funding Information: Manuscript received October 26, 2009; revised October 28, 2009. First published December 31, 2009; current version published January 27, 2010. This work was supported in part by the National Science Council under Grants 98-2221-E-003-020-MY3 and 97-2622-E-003-003-CC1, by the National Nano Device Laboratories, and by the Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Taiwan. The review of this letter was arranged by Editor S. Kawamura.",

year = "2010",

month = feb,

doi = "10.1109/LED.2009.2036138",

language = "English",

volume = "31",

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AU - Lee, M. H.

AU - Chang, S. T.

AU - Maikap, S.

AU - Peng, C. Y.

AU - Lee, C. H.

N1 - Funding Information: Manuscript received October 26, 2009; revised October 28, 2009. First published December 31, 2009; current version published January 27, 2010. This work was supported in part by the National Science Council under Grants 98-2221-E-003-020-MY3 and 97-2622-E-003-003-CC1, by the National Nano Device Laboratories, and by the Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute, Taiwan. The review of this letter was arranged by Editor S. Kawamura.

PY - 2010/2

Y1 - 2010/2

N2 - The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

AB - The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

KW - (110)

KW - Mobility

KW - Orientation

KW - SiGe

KW - Strain

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DO - 10.1109/LED.2009.2036138

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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High ge content of SiGe channel pMOSFETs on Si (110) surfaces

Abstract

Keywords

ASJC Scopus subject areas

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