High ge content of SiGe channel pMOSFETs on Si (110) surfaces

Min-Hung Lee, S. T. Chang, S. Maikap, C. Y. Peng, C. H. Lee

    Research output: Contribution to journalArticlepeer-review

    14 Citations (Scopus)


    The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

    Original languageEnglish
    Article number5371936
    Pages (from-to)141-143
    Number of pages3
    JournalIEEE Electron Device Letters
    Issue number2
    Publication statusPublished - 2010 Feb 1


    • (110)
    • Mobility
    • Orientation
    • SiGe
    • Strain

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

    Fingerprint Dive into the research topics of 'High ge content of SiGe channel pMOSFETs on Si (110) surfaces'. Together they form a unique fingerprint.

    Cite this