High ge content of SiGe channel pMOSFETs on Si (110) surfaces

Min-Hung Lee, S. T. Chang, S. Maikap, C. Y. Peng, C. H. Lee

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

Original languageEnglish
Article number5371936
Pages (from-to)141-143
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number2
DOIs
Publication statusPublished - 2010 Feb 1

Keywords

  • (110)
  • Mobility
  • Orientation
  • SiGe
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lee, M-H., Chang, S. T., Maikap, S., Peng, C. Y., & Lee, C. H. (2010). High ge content of SiGe channel pMOSFETs on Si (110) surfaces. IEEE Electron Device Letters, 31(2), 141-143. [5371936]. https://doi.org/10.1109/LED.2009.2036138