High ge content of SiGe channel pMOSFETs on Si (110) surfaces

Min-Hung Lee, S. T. Chang, S. Maikap, C. Y. Peng, C. H. Lee

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

Original languageEnglish
Article number5371936
Pages (from-to)141-143
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number2
DOIs
Publication statusPublished - 2010 Feb 1

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Hole mobility
Drain current

Keywords

  • (110)
  • Mobility
  • Orientation
  • SiGe
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lee, M-H., Chang, S. T., Maikap, S., Peng, C. Y., & Lee, C. H. (2010). High ge content of SiGe channel pMOSFETs on Si (110) surfaces. IEEE Electron Device Letters, 31(2), 141-143. [5371936]. https://doi.org/10.1109/LED.2009.2036138

High ge content of SiGe channel pMOSFETs on Si (110) surfaces. / Lee, Min-Hung; Chang, S. T.; Maikap, S.; Peng, C. Y.; Lee, C. H.

In: IEEE Electron Device Letters, Vol. 31, No. 2, 5371936, 01.02.2010, p. 141-143.

Research output: Contribution to journalArticle

Lee, M-H, Chang, ST, Maikap, S, Peng, CY & Lee, CH 2010, 'High ge content of SiGe channel pMOSFETs on Si (110) surfaces', IEEE Electron Device Letters, vol. 31, no. 2, 5371936, pp. 141-143. https://doi.org/10.1109/LED.2009.2036138
Lee, Min-Hung ; Chang, S. T. ; Maikap, S. ; Peng, C. Y. ; Lee, C. H. / High ge content of SiGe channel pMOSFETs on Si (110) surfaces. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 2. pp. 141-143.
@article{6c8d344e864b4f6fb1b464cb18245546,
title = "High ge content of SiGe channel pMOSFETs on Si (110) surfaces",
abstract = "The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70{\%} and by 80{\%} for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200{\%} hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.",
keywords = "(110), Mobility, Orientation, SiGe, Strain",
author = "Min-Hung Lee and Chang, {S. T.} and S. Maikap and Peng, {C. Y.} and Lee, {C. H.}",
year = "2010",
month = "2",
day = "1",
doi = "10.1109/LED.2009.2036138",
language = "English",
volume = "31",
pages = "141--143",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - High ge content of SiGe channel pMOSFETs on Si (110) surfaces

AU - Lee, Min-Hung

AU - Chang, S. T.

AU - Maikap, S.

AU - Peng, C. Y.

AU - Lee, C. H.

PY - 2010/2/1

Y1 - 2010/2/1

N2 - The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

AB - The characteristics of $\hbox{Si}-{0.2}\hbox{Ge}-{0.8}$ channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0. 2Ge0. 8(110) PFET are enhanced by 70% and by 80% for the (110)channel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe (110)/(110) PFET has ∼200% hole mobility enhancement. The performance difference of the SiGe (110) / (110) and (100)/(110) PFT is about 2.7 times when considering mobility, and these effects are explained.

KW - (110)

KW - Mobility

KW - Orientation

KW - SiGe

KW - Strain

UR - http://www.scopus.com/inward/record.url?scp=75749084333&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=75749084333&partnerID=8YFLogxK

U2 - 10.1109/LED.2009.2036138

DO - 10.1109/LED.2009.2036138

M3 - Article

AN - SCOPUS:75749084333

VL - 31

SP - 141

EP - 143

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

M1 - 5371936

ER -