High frequency impedance inverse in MTJ junction

L. C. Hsieh; Y. W. Huang; X. F. Han; Z. M. Zeng; W. C. Chien; T. Y. Peng; C. K. Lo; Y. D. Yao

doi:10.1016/j.jmmm.2006.10.1097

High frequency impedance inverse in MTJ junction

L. C. Hsieh, Y. W. Huang^*, X. F. Han, Z. M. Zeng, W. C. Chien, T. Y. Peng, C. K. Lo, Y. D. Yao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The magnetoimpedance effect of magnetic tunnel junction (MTJ) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The MR loop with a ratio of 9.49% at 5 MHz switches to -11.51% at 7 MHz, respectively. This indicates the MR loop reverse shape and sign around 6 MHz. This inverse MR effect is explained by the impedance competition among Resistor-Inductor series circuit and Capacitor part.

Original language	English
Pages (from-to)	1903-1904
Number of pages	2
Journal	Journal of Magnetism and Magnetic Materials
Volume	310
Issue number	2 SUPPL. PART 3
DOIs	https://doi.org/10.1016/j.jmmm.2006.10.1097
Publication status	Published - 2007 Mar
Externally published	Yes

Keywords

Impedance
Inverse
MTJ

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1016/j.jmmm.2006.10.1097

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title = "High frequency impedance inverse in MTJ junction",

abstract = "The magnetoimpedance effect of magnetic tunnel junction (MTJ) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The MR loop with a ratio of 9.49% at 5 MHz switches to -11.51% at 7 MHz, respectively. This indicates the MR loop reverse shape and sign around 6 MHz. This inverse MR effect is explained by the impedance competition among Resistor-Inductor series circuit and Capacitor part.",

keywords = "Impedance, Inverse, MTJ",

author = "Hsieh, {L. C.} and Huang, {Y. W.} and Han, {X. F.} and Zeng, {Z. M.} and Chien, {W. C.} and Peng, {T. Y.} and Lo, {C. K.} and Yao, {Y. D.}",

year = "2007",

month = mar,

doi = "10.1016/j.jmmm.2006.10.1097",

language = "English",

volume = "310",

pages = "1903--1904",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

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number = "2 SUPPL. PART 3",

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TY - JOUR

T1 - High frequency impedance inverse in MTJ junction

AU - Hsieh, L. C.

AU - Huang, Y. W.

AU - Han, X. F.

AU - Zeng, Z. M.

AU - Chien, W. C.

AU - Peng, T. Y.

AU - Lo, C. K.

AU - Yao, Y. D.

PY - 2007/3

Y1 - 2007/3

N2 - The magnetoimpedance effect of magnetic tunnel junction (MTJ) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The MR loop with a ratio of 9.49% at 5 MHz switches to -11.51% at 7 MHz, respectively. This indicates the MR loop reverse shape and sign around 6 MHz. This inverse MR effect is explained by the impedance competition among Resistor-Inductor series circuit and Capacitor part.

AB - The magnetoimpedance effect of magnetic tunnel junction (MTJ) was investigated at room temperature in the frequency ranged from 100 Hz to 15 MHz. The MR loop with a ratio of 9.49% at 5 MHz switches to -11.51% at 7 MHz, respectively. This indicates the MR loop reverse shape and sign around 6 MHz. This inverse MR effect is explained by the impedance competition among Resistor-Inductor series circuit and Capacitor part.

KW - Impedance

KW - Inverse

KW - MTJ

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UR - http://www.scopus.com/inward/citedby.url?scp=33847687218&partnerID=8YFLogxK

U2 - 10.1016/j.jmmm.2006.10.1097

DO - 10.1016/j.jmmm.2006.10.1097

M3 - Article

AN - SCOPUS:33847687218

SN - 0304-8853

VL - 310

SP - 1903

EP - 1904

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

IS - 2 SUPPL. PART 3

ER -

High frequency impedance inverse in MTJ junction

Abstract

Keywords

ASJC Scopus subject areas

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